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Transport properties of praseodymium doped p-type In0.53Ga0.47As layers

Author/Creator: Κουρκουτάς, Κωνσταντίνος Δ.; Kulifayova, M.; Παπαϊωάννου, Γεώργιος; Κόρδος, Π.; Ιωάννου-Σουγλερίδης, Βασίλης

Publication Date: 1991-05
Effect of electron irradiation on the mobility profile in GaAs FATFETs

Author/Creator: Szentpali, B.; Kovacs, B.; Κουρκουτάς, Κωνσταντίνος Δ.; Huber, D.; Ευθυμίου, Π.Κ.

Publication Date: 1991-11
DLTS studies of defects in GaP:Te before and after electron irradiation

Author/Creator: Banbury, P.C.; Ευθυμίου, Π.Κ.; Κουρκουτάς, Κωνσταντίνος Δ.; Ζάρδας, Γεώργιος

Publication Date: 1990-04
Dependence of the mobility limit upon the Fermi level position in direct gap III–V group semiconductors

Author/Creator: Κουρκουτάς, Κωνσταντίνος Δ.; Ευθυμίου, Π.Κ.; Παπαϊωάννου, Γεώργιος

Publication Date: 1990-06
A study of the profile of the E3 electron trap in GaAs

Author/Creator: Κουρκουτάς, Κωνσταντίνος Δ.; Kovacs, B.; Ευθυμίου, Π.Κ.; Szentpali, B.; Somogyi, K.

Publication Date: 1994-01
Correction of the drift mobility measurements in GaAs MESFETS

Author/Creator: Κουρκουτάς, Κωνσταντίνος Δ.; Ευθυμίου, Π.Κ.; Szentpali, B.; Kocacs, B.; Somogyi, K.

Publication Date: 1991-06

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