International effort are presently being conducted to develop the 157 nm lithography, which is expected to be the next generation optical lithography, allowing to meet the 70 nm node and possibly go beyond. However, resist absorbance is a major problem at 157 nm where "usual" carbon containing resists with too high absorbance at this wavelength. A possible way to face this problem is to use silicon containing resists, which present a suitable absorbance at 157 nm.