Some results on Monte-Carlo calculations of back-scattering and x-ray-induced correction factors for AES on thin overlayers have been given in a previous paper. In this work, further results are given concerning both correction factors and the lateral resolution in the primary beam energy range 5-60 keV. The x-ray-induced correction factors include both characteristic and continuous x-rays created in the bulk by the primary electrons beam or by back-scattered electrons that contribute to the creation of Auger electrons within the film on their way out of the sample. The contribution of continuous x-rays, negligible at low primary beam energies, is found to be important at energies of >20 keV. The influence of back-scattering on the lateral resolution in the primary beam energy range 20-60 keV has also been studied.