DLTS studies on as grown Czochralski n-type GaP : Te show peaks corresponding to electron activation of 0.205, 0.485, 0.65 and 0.567 eV. After irradiation by 1 MeV electrons at room temperature two new levels are found at 0.248 and 0.329 eV and the peak corresponding to the level 0.567 eV increased in amplitude. The level of 0.49 eV, present in all cases and specimens showed charge dependent bistability. A technique is described by which activation energies were measured for conversion between stable configurations.