Interface states and MWS polarization contributions to the dielectric response of low voltage ZnO varistor

dc.contributor.author	Τσώνος, Χ.	el
dc.contributor.author	Καναπίτσας, Αθανάσιος	el
dc.contributor.author	Τριάντης, Δήμος Α.	el
dc.contributor.author	Αναστασιάδης - Αϊνατζόγλου, Χρήστος	el
dc.contributor.author	Σταύρακας, Ι.	el
dc.date.accessioned	2015-05-14T14:40:19Z
dc.date.available	2015-05-14T14:40:19Z
dc.date.issued	2015-05-14
dc.identifier.uri	http://hdl.handle.net/11400/10370
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com	en
dc.subject	Grain boundaries
dc.subject	Computer interfaces
dc.subject	dielectric properties
dc.subject	όρια των κόκκων
dc.subject	διασυνδέσεις
dc.subject	διηλεκτρικές ιδιότητες
dc.subject	ZnO
dc.title	Interface states and MWS polarization contributions to the dielectric response of low voltage ZnO varistor	en
heal.type	journalArticle
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classification	Technology
heal.classification	Electrical engineering
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://skos.um.es/unescothes/C01311
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85056228
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85029507
heal.keywordURI	http://lod.nal.usda.gov/33331
heal.contributorName	Πισής, Π.	el
heal.contributorName	Νεάγκου, Ε.	el
heal.identifier.secondary	DOI: 10.1016/j.ceramint.2010.08.036
heal.language	en
heal.access	campus
heal.recordProvider	Τεχνολογικό Εκπαιδευτικό Ίδρυμα Αθήνας. Σχολή Τεχνολογικών Εφαρμογών. Τμήμα Ηλεκτρονικών Μηχανικών Τ.Ε.	el
heal.publicationDate	2011-01
heal.bibliographicCitation	Tsonos, C., Kanapitsas, A., Triantis, D., Anastasiadis, C., Stavrakas, I., et. al (2011). Interface states and MWS polarization contributions to the dielectric response of low voltage ZnO varistor. "Ceramics International". 37(1): p. 207-214	en
heal.abstract	The main purpose of this work is to study the dielectric response of commercial low voltage ZnO varistors by means of dielectric relaxation spectroscopy (DRS) and thermally stimulated depolarization currents (TSDC) in a wide temperature range. Four relaxation processes have been studied here and all of them demonstrate Cole–Davidson behaviour. The first two faster relaxation mechanisms are known processes in ZnO varistors and those are related to the ZnO bulk traps. The next one faster relaxation mechanism attributed to the MWS polarization which should be related to the intergranular Bi-rich microregions. The remaining slower relaxation mechanism is associated to the grain boundaries interfaces. Based on the block model for the ZnO varistor a gradual reduction in the total depletion width is observed at a temperature about 330 K, which can be considered that is due to the gradual decrease of the interface states density at this temperature region.	en
heal.journalName	Ceramics International	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true