Evolution of resist roughness during development

dc.contributor.author	Κωνσταντούδης, Βασίλειος	el
dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Γογγολίδης, Ευάγγελος	el
dc.date.accessioned	2015-05-16T16:05:32Z
dc.date.available	2015-05-16T16:05:32Z
dc.date.issued	2015-05-16
dc.identifier.uri	http://hdl.handle.net/11400/10540
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://ieeexplore.ieee.org	en
dc.subject	Στοχαστική προσομοίωση
dc.subject	Ανάλυση δυναμικής κλιμάκωσης
dc.subject	Μικροηλεκτρονική
dc.subject	Microelectronics
dc.title	Evolution of resist roughness during development	en
heal.type	conferenceItem
heal.secondaryTitle	stochastic simulation and dynamic scaling analysis	en
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.identifier.secondary	DOI: dx.doi.org/10.1117/1.3497580
heal.language	en
heal.access	campus
heal.publicationDate	2010-05-16
heal.bibliographicCitation	Constantinoudis, V., Patsis, G. and Gogolides, E. (2010) Evolution of resist roughness during development: Stochastic simulation and dynamic scaling analysis. In 27th International Conference on Microelectronics, Proceedings. 16th to 19th May 2010. Nis, p.269-272	en
heal.abstract	The examination of the roughness evolution of open-surface resist films during development may elucidate the material origins of Line Edge Roughness. In this paper, a stochastic simulator of resist development is used and the surface roughness evolution is analyzed with dynamic scaling theory. A power-law increase of rms roughness and correlation length is found for resists with homogeneous solubility. The scaling exponents are shown to obey the dynamical scaling hypothesis of Family-Viscek. The insertion of inhomogeneity in the solubility of resist causes much larger increase of rms roughness and anomalous scaling behaviour. Comparison with experimental results shows good agreement with the simulation predictions.	en
heal.fullTextAvailability	false
heal.conferenceName	27th International Conference on Microelectronics	en
heal.conferenceItemType	poster