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dc.contributor.author Erdmann, Andreas en
dc.contributor.author Shao, Feng en
dc.contributor.author Fuhrmann, Juergen en
dc.contributor.author Fiebach, Andre en
dc.contributor.author Πάτσης, Γεώργιος el
dc.date.accessioned 2015-05-16T16:26:42Z
dc.date.available 2015-05-16T16:26:42Z
dc.date.issued 2015-05-16
dc.identifier.uri http://hdl.handle.net/11400/10542
dc.rights Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.source http://spiedigitallibrary.org en
dc.source http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=756476 en
dc.subject Photoresist materials
dc.subject LIthography
dc.subject Etching
dc.subject Λιθογραφία
dc.subject Χαλκογραφία
dc.subject Υλικά φωτοαντίστασης
dc.title Modeling of double patterning interactions in litho-cure-litho-etch (LCLE) processes en
heal.type conferenceItem
heal.classification Technology
heal.classification Electronics
heal.classification Τεχνολογία
heal.classification Ηλεκτρονική
heal.classificationURI http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI **N/A**-Τεχνολογία
heal.classificationURI **N/A**-Ηλεκτρονική
heal.contributorName Τρύφωνας, Πέτρος el
heal.identifier.secondary DOI: http://dx.doi.org/10.1117/12.845849
heal.language en
heal.access campus
heal.publicationDate 2010-02-21
heal.bibliographicCitation Erdmann, A., Shao, F., Fuhrmann, J., Fiebach, A., Patsis, G. et al. (2010) Modeling of double patterning interactions in litho-cure-litho-etch (LCLE) processes. In Optical Microlithography XXIII. 21st February 2010. San Jose en
heal.abstract This paper uses advanced modeling techniques to explore interactions between the two lithography processes in a lithocure- etch process and to qualify their impact on the final resist profiles and process performance. Specifically, wafer topography effects due to different optical properties of involved photoresist materials, linewidth variations in the second lithography step due to partial deprotection of imperfectly cured resist, and acid/quencher diffusion effects between resist materials are investigated. The paper highlights the results of the simulation work package of the European MD3 project. en
heal.fullTextAvailability false
heal.conferenceName Optical Microlithography XXIII en
heal.conferenceItemType poster


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Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες Except where otherwise noted, this item's license is described as Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες