Modeling of double patterning interactions in litho-cure-litho-etch (LCLE) processes

dc.contributor.author	Erdmann, Andreas	en
dc.contributor.author	Shao, Feng	en
dc.contributor.author	Fuhrmann, Juergen	en
dc.contributor.author	Fiebach, Andre	en
dc.contributor.author	Πάτσης, Γεώργιος	el
dc.date.accessioned	2015-05-16T16:26:42Z
dc.date.available	2015-05-16T16:26:42Z
dc.date.issued	2015-05-16
dc.identifier.uri	http://hdl.handle.net/11400/10542
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://spiedigitallibrary.org	en
dc.source	http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=756476	en
dc.subject	Photoresist materials
dc.subject	LIthography
dc.subject	Etching
dc.subject	Λιθογραφία
dc.subject	Χαλκογραφία
dc.subject	Υλικά φωτοαντίστασης
dc.title	Modeling of double patterning interactions in litho-cure-litho-etch (LCLE) processes	en
heal.type	conferenceItem
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.contributorName	Τρύφωνας, Πέτρος	el
heal.identifier.secondary	DOI: http://dx.doi.org/10.1117/12.845849
heal.language	en
heal.access	campus
heal.publicationDate	2010-02-21
heal.bibliographicCitation	Erdmann, A., Shao, F., Fuhrmann, J., Fiebach, A., Patsis, G. et al. (2010) Modeling of double patterning interactions in litho-cure-litho-etch (LCLE) processes. In Optical Microlithography XXIII. 21st February 2010. San Jose	en
heal.abstract	This paper uses advanced modeling techniques to explore interactions between the two lithography processes in a lithocure- etch process and to qualify their impact on the final resist profiles and process performance. Specifically, wafer topography effects due to different optical properties of involved photoresist materials, linewidth variations in the second lithography step due to partial deprotection of imperfectly cured resist, and acid/quencher diffusion effects between resist materials are investigated. The paper highlights the results of the simulation work package of the European MD3 project.	en
heal.fullTextAvailability	false
heal.conferenceName	Optical Microlithography XXIII	en
heal.conferenceItemType	poster