dc.contributor.author | Κωνσταντούδης, Βασίλειος | el |
dc.contributor.author | Γογγολίδης, Ευάγγελος | el |
dc.contributor.author | Πάτσης, Γεώργιος | el |
dc.date.accessioned | 2015-05-16T18:10:47Z | |
dc.date.issued | 2015-05-16 | |
dc.identifier.uri | http://hdl.handle.net/11400/10547 | |
dc.rights | Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.source | http://ieeexplore.ieee.org | el |
dc.subject | Semiconductor device | |
dc.subject | Συσκευή ημιαγωγών | |
dc.subject | Microelectronics | |
dc.subject | Μικροηλεκτρονική | |
dc.title | Line width roughness effects on device performance | en |
heal.type | conferenceItem | |
heal.secondaryTitle | the role of the gate width design | en |
heal.classification | Technology | |
heal.classification | Electronics | |
heal.classification | Τεχνολογία | |
heal.classification | Ηλεκτρονική | |
heal.classificationURI | http://id.loc.gov/authorities/subjects/sh85133147 | |
heal.classificationURI | http://id.loc.gov/authorities/subjects/sh85042383 | |
heal.classificationURI | **N/A**-Τεχνολογία | |
heal.classificationURI | **N/A**-Ηλεκτρονική | |
heal.identifier.secondary | DOI: 10.1109/MIEL.2010.5490486 | |
heal.dateAvailable | 10000-01-01 | |
heal.language | en | |
heal.access | forever | |
heal.publicationDate | 2010-05-16 | |
heal.bibliographicCitation | Constantoudis, V., Gogolides, E. and Patsis, G. (2010) Line width roughness effects on device performance: the role of the gate width design. In 27th International Conference on Microelectronics. Proceedings. 16th to 19th May 2010. Nis, p.265 - 268 | en |
heal.abstract | The role of the gate width in the effects of Line Width Roughness (LWR) on transistor performance is investigated. Two mathematical results regarding the statistical nature of LWR are presented and discussed. Exploiting the implications of these results through a 2D modeling approach, we indicate that, for fixed LWR, transistors with large gate widths seem to mitigate the degradation effects of LWR on transistor performance. | en |
heal.publisher | ΙΕΕΕ | en |
heal.fullTextAvailability | false | |
heal.conferenceName | 27th International Conference on Microelectronics | en |
heal.conferenceItemType | poster |
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