dc.contributor.author | Fuhrmann, Andreas | el |
dc.contributor.author | Πάτσης, Γεώργιος | el |
dc.contributor.author | Fiebach, Andre | en |
dc.date.accessioned | 2015-05-16T23:48:17Z | |
dc.date.issued | 2015-05-17 | |
dc.identifier.uri | http://hdl.handle.net/11400/10564 | |
dc.rights | Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.source | spiedigitallibrary.org | en |
dc.source | http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=756355 | en |
dc.subject | Diffusion | |
dc.subject | Διάχυση | |
dc.subject | Μακροσκοπικές προσεγγίσεις | |
dc.subject | Στοχαστικές προσεγγίσεις | |
dc.title | Macroscopic and stochastic modeling approaches to pattern doubling by acid catalyzed cross-linking | en |
heal.type | conferenceItem | |
heal.classification | Technology | |
heal.classification | Electronics | |
heal.classification | Τεχνολογία | |
heal.classification | Ηλεκτρονική | |
heal.classificationURI | http://id.loc.gov/authorities/subjects/sh85133147 | |
heal.classificationURI | http://id.loc.gov/authorities/subjects/sh85042383 | |
heal.classificationURI | **N/A**-Τεχνολογία | |
heal.classificationURI | **N/A**-Ηλεκτρονική | |
heal.identifier.secondary | DOI: http://dx.doi.org/10.1117/12.846491 | |
heal.dateAvailable | 10000-01-01 | |
heal.language | en | |
heal.access | forever | |
heal.publicationDate | 2010-02-21 | |
heal.bibliographicCitation | Fuhrmann, J., Fiebach, A. and Patsis, G. (2010) Macroscopic and stochastic modeling approaches to pattern doubling by acid catalyzed cross-linking. In Advances in Resist Materials and Processing Technology XXVII. 21st February 2010. San Jose | en |
heal.abstract | Pattern doubling by cross-linking of a spacer triggered by residual acid diffusion from a previously developed primary structure into the spacer is a possible option to create structure widths below the nominal resolution of the optical process. An advantage of such a process step would be the self-alignment to the primary structure, which would render a second exposure step unnecessary. Using macroscopic and stochastic modeling approaches, we demonstrate that it may be possible to control the width of the secondary structure created by cross-linking by the amount of quencher base added. | en |
heal.fullTextAvailability | false | |
heal.conferenceName | Advances in Resist Materials and Processing Technology XXVII | en |
heal.conferenceItemType | poster |
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