Simulation of shot noise effect on CD and LER of electron-beam lithography in 32 nm designs

dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Τσικρικάς, Ν.	el
dc.contributor.author	Δρυγιαννάκης, Δ.	el
dc.contributor.author	Ράπτης, Ιωάννης	el
dc.date.accessioned	2015-05-16T23:56:44Z
dc.date.available	2015-05-16T23:56:44Z
dc.date.issued	2015-05-17
dc.identifier.uri	http://hdl.handle.net/11400/10565
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com	en
dc.subject	Προσομοίωση
dc.subject	Electron-beam lithography
dc.subject	Λιθογραφία δέσμης ηλεκτρονίων
dc.subject	Electron scattering mechanisms
dc.subject	Μηχανισμοί διασποράς ηλεκτρονίων
dc.title	Simulation of shot noise effect on CD and LER of electron-beam lithography in 32 nm designs	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.identifier.secondary	DOI: dx.doi.org/10.1016/j.mee.2009.11.014
heal.language	en
heal.access	campus
heal.publicationDate	2010-05
heal.bibliographicCitation	Patsis, G., Tsikrikas, N., Drygiannakis, D. and Raptis, I. (2010) Simulation of shot noise effect on CD and LER of electron-beam lithography in 32 nm designs. "Microelectronic Engineering", 87 (5-8), p.1575–1578	en
heal.abstract	Mask fabrication or even maskless lithography operations are performed with electron-beam lithography (EBL). The detailed understanding of the electron scattering mechanisms in resist films and multilayer substrates, as well as on substrates with topography is mandatory. Along the same track the problem of line edge roughness (LER) of created structures is emerging, because it strongly affects the device electrical behavior. Process simulation could be used for the quantification of the effects of electron-beam exposure and resist material on the produced layout. In the current work coupling between a detailed Monte-Carlo e-beam–matter interaction simulator and a stochastic resist film modeling simulator for the materials, postexposure bake, and development allows for simulation of the shot noise, resist material, and process effects on the critical dimension (CD) and LER in the 32 technology patterned by direct EBL. An example of quantification of shot noise and resist contribution to LER is provided.	en
heal.publisher	Elsevier	en
heal.journalName	Microelectronic Engineering	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false