Detailed resist film modeling in stochastic lithography simulation for line-edge roughness quantification

dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Δρυγιαννάκης, Δ.	el
dc.contributor.author	Ράπτης, Ιωάννης	el
dc.date.accessioned	2015-05-17T00:02:50Z
dc.date.available	2015-05-17T00:02:50Z
dc.date.issued	2015-05-17
dc.identifier.uri	http://hdl.handle.net/11400/10566
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com	en
dc.source	http://www.sciencedirect.com/science/article/pii/S0167931709007874	en
dc.subject	Molecular simulation
dc.subject	Μοριακή προσομοίωση
dc.subject	Λιθογραφία
dc.title	Detailed resist film modeling in stochastic lithography simulation for line-edge roughness quantification	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.identifier.secondary	DOI: 10.1016/j.mee.2009.11.122
heal.language	en
heal.access	campus
heal.publicationDate	2010-05
heal.bibliographicCitation	Patsis, G., Drygiannakis, D. and Raptis, I. (2010) Detailed resist film modeling in stochastic lithography simulation for line-edge roughness quantification. "Microelectronic Engineering", 87 (5-8), p.989–992	en
heal.abstract	Modeling the lithography process with stochastic principles enables the consideration of resist material and process effects variability on critical dimensions and line-edge or line-width roughness of printed features. These principles are applied for a resist system where polymer and photo-acid-generator (PAG) are blended, and for the same system with the PAG molecules bonded on the main polymer chain. Three-dimensional chain-like models of resist and PAG are considered and examples of their effect on critical dimensions and on resist edge roughness are presented. Comparison with experimental results from the literature proves the validity of the current approach and suggests that it can be used for the prediction of the resist resolution and low roughness capabilities.	en
heal.publisher	Elsevier	en
heal.journalName	Microelectronic Engineering	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false