Modeling of line edge roughness transfer during plasma etching

dc.contributor.author	Κωνσταντούδης, Βασίλειος	el
dc.contributor.author	Κόκκορης, Γ.	el
dc.contributor.author	Ξυδή, Π.	el
dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Γογγολίδης, Ευάγγελος	el
dc.date.accessioned	2015-05-17T00:36:24Z
dc.date.available	2015-05-17T00:36:24Z
dc.date.issued	2015-05-17
dc.identifier.uri	http://hdl.handle.net/11400/10567
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com	en
dc.source	http://www.sciencedirect.com/science/article/pii/S0167931709000641	en
dc.subject	Line edge roughness
dc.subject	Isotropic movement
dc.subject	Ισοτροπική κίνηση
dc.title	Modeling of line edge roughness transfer during plasma etching	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.identifier.secondary	DOI: 10.1016/j.mee.2009.01.040
heal.language	en
heal.access	campus
heal.publicationDate	2009-04
heal.bibliographicCitation	Constantoudis, V., Kokkoris, G., Xydi, P., Patsis, G. and Gogolides, E. (2009) Modeling of line edge roughness transfer during plasma etching. "Microelectronic Engineering", 86 (4-6), p.968–970	en
heal.abstract	Although a lot of interest has been devoted to the sidewall roughness of resist lines after lithography (usually called resist line edge roughness, LER), much less attention has been paid on how resist LER is transferred to underlayers through etching steps. The aim of this paper is to investigate this impact by means of two models. The first model takes into account the full three-dimensional (3D) set up of the LER transfer problem and considers the ion bombardment as the main etching mechanism. The second simulates the etching transfer with the phenomenological isotropic movement of the rough edges of lines in two-dimensions (2D). Both models predict a significant reduction of the rms value of LER when it is transferred to underlayers. The reduction becomes stronger at low litho-resist correlation lengths. Furthermore, both models give similar trends versus changes in litho-resist rms values, although noticeable quantitative differences are found. The latter seems to lead to the conclusion that the vertical ion bombardment (3D model) alone cannot account for the phenomenological isotropic movement of rough edges of top down scanning electron microscope images (2D model).	en
heal.publisher	Elsevier	en
heal.journalName	Microelectronic Engineering	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false