Advanced lithography models for strict process control in the 32 nm technology node

dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Δρυγιαννάκης, Δ.	el
dc.contributor.author	Ράπτης, Ιωάννης	el
dc.contributor.author	Γογγολίδης, Ευάγγελος	el
dc.contributor.author	Erdmann, Andreas	el
dc.date.accessioned	2015-05-17T15:55:17Z
dc.date.available	2015-05-17T15:55:17Z
dc.date.issued	2015-05-17
dc.identifier.uri	http://hdl.handle.net/11400/10589
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com	en
dc.source	http://www.sciencedirect.com/science/article/pii/S0167931709000707	en
dc.subject	Mesoscale simulation
dc.subject	Molecular resistance
dc.subject	Προσομοίωση μέσης κλίμακας
dc.subject	Μοριακή αντίσταση
dc.subject	LER
dc.subject	High resolution lithography
dc.subject	Λιθογραφία υψηλής ανάλυσης
dc.title	Advanced lithography models for strict process control in the 32 nm technology node	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.identifier.secondary	DOI: 10.1016/j.mee.2009.01.050
heal.language	en
heal.access	campus
heal.publicationDate	2009-04
heal.bibliographicCitation	Patsis, G., Drygiannakis, D., Raptis, I., Gogolides, E. and Erdmann, A. (2009) Advanced lithography models for strict process control in the 32 nm technology node. "Microelectronic Engineering", 86 (4-6), p.513–516	en
heal.abstract	Macroscopic photoresist processing simulation tools are combined with mesoscopic stochastic simulations in order to enable quantification of the discrete composition of the photoresist material. The effect of degree of polymerization of the polymer 2D and 3D models on the CD and LWR of 32 nm lines/spaces exposed either under non-diffraction-limited conditions and with 193 nm immersion lithography simulation are studied.	en
heal.publisher	Elsevier	en
heal.journalName	Microelectronic Engineering	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false