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dc.contributor.author Πάτσης, Γεώργιος el
dc.contributor.author Δρυγιαννάκης, Δ. el
dc.contributor.author Ράπτης, Ιωάννης el
dc.contributor.author Γογγολίδης, Ευάγγελος el
dc.contributor.author Erdmann, Andreas el
dc.date.accessioned 2015-05-17T15:55:17Z
dc.date.available 2015-05-17T15:55:17Z
dc.date.issued 2015-05-17
dc.identifier.uri http://hdl.handle.net/11400/10589
dc.rights Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.source http://www.sciencedirect.com en
dc.source http://www.sciencedirect.com/science/article/pii/S0167931709000707 en
dc.subject Mesoscale simulation
dc.subject Molecular resistance
dc.subject Προσομοίωση μέσης κλίμακας
dc.subject Μοριακή αντίσταση
dc.subject LER
dc.subject High resolution lithography
dc.subject Λιθογραφία υψηλής ανάλυσης
dc.title Advanced lithography models for strict process control in the 32 nm technology node en
heal.type journalArticle
heal.classification Technology
heal.classification Electronics
heal.classification Τεχνολογία
heal.classification Ηλεκτρονική
heal.classificationURI http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI **N/A**-Τεχνολογία
heal.classificationURI **N/A**-Ηλεκτρονική
heal.identifier.secondary DOI: 10.1016/j.mee.2009.01.050
heal.language en
heal.access campus
heal.publicationDate 2009-04
heal.bibliographicCitation Patsis, G., Drygiannakis, D., Raptis, I., Gogolides, E. and Erdmann, A. (2009) Advanced lithography models for strict process control in the 32 nm technology node. "Microelectronic Engineering", 86 (4-6), p.513–516 en
heal.abstract Macroscopic photoresist processing simulation tools are combined with mesoscopic stochastic simulations in order to enable quantification of the discrete composition of the photoresist material. The effect of degree of polymerization of the polymer 2D and 3D models on the CD and LWR of 32 nm lines/spaces exposed either under non-diffraction-limited conditions and with 193 nm immersion lithography simulation are studied. en
heal.publisher Elsevier en
heal.journalName Microelectronic Engineering en
heal.journalType peer-reviewed
heal.fullTextAvailability false


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Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες Except where otherwise noted, this item's license is described as Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες