Injection of point defects during annealing of low energy as implanted silicon

dc.contributor.author	Τσάμης, Χρήστος	el
dc.contributor.author	Σκαρλάτος, Δημήτριος	el
dc.contributor.author	Βαλαμόντες, Ευάγγελος Σ.	el
dc.contributor.author	Τσουκαλάς, Δημήτρης Σ.	el
dc.contributor.author	Benassayag, Gérard	en
dc.date.accessioned	2015-05-17T16:10:08Z
dc.date.available	2015-05-17T16:10:08Z
dc.date.issued	2015-05-17
dc.identifier.uri	http://hdl.handle.net/11400/10590
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.elsevier.com/	en
dc.subject	Injection
dc.subject	Point defects
dc.subject	Annealing
dc.subject	Έγχυση
dc.subject	Ατέλειες σημείου
dc.subject	Ανόπτηση
dc.title	Injection of point defects during annealing of low energy as implanted silicon	en
heal.type	conferenceItem
heal.classification	Technology
heal.classification	Engineering
heal.classification	Τεχνολογία
heal.classification	Μηχανική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://zbw.eu/stw/descriptor/19795-3
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Μηχανική
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85103915
heal.contributorName	Claverie, Alain	en
heal.contributorName	Lerch, Wilfried	en
heal.identifier.secondary	DOI: 10.1016/j.mseb.2005.08.123
heal.language	en
heal.access	campus
heal.publicationDate	2005-12-05
heal.bibliographicCitation	Tsamis, C., Skarlatos, D., Valamontes, E.S., Tsoukalas, D.S., Benassayag, G., et al. (2005) Injection of point defects during annealing of low energy as implanted silicon, In: Proceedings of the E-MRS 2005, Symposium D — Materials Science and Device Issues for Future Technologies. 2005. [online] 124-125. p. 261-265. Available from: http://www.elsevier.com/[Accessed 06/10/2005]	en
heal.abstract	In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low energy arsenic implantation. The diffusion of the implanted arsenic as well as of boron, existing in buried δ-layers below the silicon surface, is monitored while successive amounts of the arsenic profile are removed by low temperature wet silicon etching. From the analysis of the diffusion profiles of both dopants, consistent values for the interstitial supersaturation ratio can be obtained. Moreover, the experimental results indicate that the contribution of the implantation damage to the TED of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.	en
heal.publisher	Elsevier	en
heal.fullTextAvailability	true
heal.conferenceName	E-MRS 2005, Symposium D — Materials Science and Device Issues for Future Technologies	en
heal.conferenceItemType	poster