Modelling MOSFET gate length variability for future technology nodes

dc.contributor.author	Πάτσης, Γεώργιος	el
dc.date.accessioned	2015-05-17T16:15:44Z
dc.date.issued	2015-05-17
dc.identifier.uri	http://hdl.handle.net/11400/10591
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://onlinelibrary.wiley.com	en
dc.source	http://onlinelibrary.wiley.com/doi/10.1002/pssa.200780174/abstract	en
dc.subject	Microelectronics
dc.subject	Chip
dc.subject	Technology nodes
dc.subject	Τεχνολογικοί κόμβοι
dc.subject	Μικροηλεκτρονική
dc.subject	Ολοκληρωμένο σύστημα
dc.title	Modelling MOSFET gate length variability for future technology nodes	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.identifier.secondary	DOI: 10.1002/pssa.200780174
heal.dateAvailable	10000-01-01
heal.language	en
heal.access	forever
heal.publicationDate	2008-09-17
heal.bibliographicCitation	Patsis, G. (2008) Modelling MOSFET gate length variability for future technology nodes. "Physica status solidi", 205 (11), p.2541–2543	en
heal.abstract	Gate length variability due to intra or inter die variations can lead to considerable mismatch between devices even inside the same chip. This variability has to be considered in detail and new device models should be developed, aiming in modelling its effects on the electrical characteristics devices. In this work the Philips MM11 MOSFET model is extended to incorporate gate length variability. This is introduced by dividing the device width into sub-units following a Gaussian gate length distribution, with appropriate line-width roughness. The combined model is used to quantify the drain-source current in terms of gate line-width roughness. The model is coded in VHDL-AMS in order to be used for simulation of circuit behaviour inside the framework of appropriate system simulation software such as Ansfoft's Simplorer.	en
heal.publisher	Wiley	en
heal.journalName	Physica status solidi	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false