Interstitial injection in silicon after high-dose, low-energy arsenic implantation and annealing

dc.contributor.author	Τσάμης, Χρήστος	el
dc.contributor.author	Σκαρλάτος, Δημήτριος	el
dc.contributor.author	Benassayag, Gérard	en
dc.contributor.author	Claverie, Alain	en
dc.contributor.author	Lerch, Wilfried	en
dc.date.accessioned	2015-05-17T16:25:30Z
dc.date.available	2015-05-17T16:25:30Z
dc.date.issued	2015-05-17
dc.identifier.uri	http://hdl.handle.net/11400/10594
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.aip.org/	en
dc.subject	Arsenic
dc.subject	Boron
dc.subject	Diffusion
dc.subject	Etching
dc.subject	Low temperature effects
dc.subject	Αρσενικό
dc.subject	Βόριο
dc.subject	Διάχυση
dc.subject	Χαλκογραφία
dc.subject	Χαμηλή επίδραση της θερμοκρασίας
dc.title	Interstitial injection in silicon after high-dose, low-energy arsenic implantation and annealing	en
heal.type	journalArticle
heal.classification	Science
heal.classification	Physics
heal.classification	Επιστήμες
heal.classification	Φυσική
heal.classificationURI	http://zbw.eu/stw/descriptor/15685-2
heal.classificationURI	http://zbw.eu/stw/descriptor/15669-0
heal.classificationURI	N/A-Επιστήμες
heal.classificationURI	N/A-Φυσική
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85007449
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85015871
heal.contributorName	Βαλαμόντες, Ευάγγελος Σ.	el
heal.identifier.secondary	DOI: 10.1063/1.2130397
heal.language	en
heal.access	campus
heal.publicationDate	2005-11-14
heal.bibliographicCitation	TSAMIS, C., SKARLATOS, D., BENASSAYAG, G., CLAVERIE, A., LERCH, W., et al. (2005). Interstitial injection in silicon after high-dose, low-energy arsenic implantation and annealing. Applied Physics Letters. [online] 87 (20). p. 1-3. Available from: http://scitation.aip.org/	en
heal.abstract	In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried δ -doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.	en
heal.publisher	American Institute of Physics	en
heal.journalName	Applied Physics Letters	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true