Electron beam lithography simulation for the patterning of extreme ultraviolet masks

dc.contributor.author	Τσικρικάς, Ν.	el
dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Ράπτης, Ιωάννης	el
dc.contributor.author	Gerardino, Annamaria	en
dc.contributor.author	Quesnel, E.	el
dc.date.accessioned	2015-05-17T16:33:22Z
dc.date.issued	2015-05-17
dc.identifier.uri	http://hdl.handle.net/11400/10595
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://iopscience.iop.org/	en
dc.subject	Applied physics
dc.subject	Multilayer substrates
dc.subject	Πολυστρωματικά υποστρώματα
dc.subject	Εφαρμοσμένη φυσική
dc.subject	Particle beams
dc.subject	Δέσμες σωματιδίων
dc.subject	Energy dissipation
dc.subject	Διάχυση ενέργειας
dc.title	Electron beam lithography simulation for the patterning of extreme ultraviolet masks	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.identifier.secondary	DOI: 10.1143/JJAP.47.4909
heal.dateAvailable	10000-01-01
heal.language	en
heal.access	forever
heal.publicationDate	2008
heal.bibliographicCitation	Tsikrikas, N., Patsis, G., Raptis, I., Gerardino, A, and Quesnel, E. (2008) Electron beam lithography simulation for the patterning of extreme ultraviolet masks. "Japanese Journal of Applied Physics", 47 (6)	en
heal.abstract	Extreme ultraviolet lithography (EUVL) mask is a complex multilayer stack, fabricated with electron-beam lithography. Detailed understanding of the scattering events and energy loss mechanism of the electron beam within this stack is mandatory due to the high accuracy requirements of the fabrication process. Simulation of electron-beam lithography is performed incorporating the details of the mask material-stack and the metrological information of the final layout is quantified. The effect of the Mo–Si multilayer of the EUVL mask blank on the deposited energy in the resist film is investigated. Simulation of complex layout containing features of various sizes down to 100 nm reproduced experimental metrology trends on the fine features of the layout.	en
heal.journalName	Japanese Journal of Applied Physics	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false