Tungsten oxide thin films chemically vapor deposited at low pressure by W(CO) 6 pyrolysis

dc.contributor.author	Δαβάζογλου, Δημήτριος	el
dc.contributor.author	Μουτσάκης, Α.	el
dc.contributor.author	Βαλαμόντες, Ευάγγελος Σ.	el
dc.contributor.author	Ψυχάρης, Βασίλειος	el
dc.contributor.author	Τσαμάκης, Δημήτριος Μ.	el
dc.date.accessioned	2015-05-17T16:51:44Z
dc.date.issued	2015-05-17
dc.identifier.uri	http://hdl.handle.net/11400/10599
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.electrochem.org/	en
dc.subject	annealing
dc.subject	Chemical reactors
dc.subject	Chemical vapor deposition
dc.subject	Electric conductivity measurement
dc.subject	X-ray crystallography
dc.subject	Ανόπτηση
dc.subject	Χημική αντιδραστήρες
dc.subject	Χημική εναπόθεση ατμών
dc.subject	Μέτρηση ηλεκτρικής αγωγιμότητας
dc.subject	Κρυσταλλογραφία ακτίνων Χ
dc.title	Tungsten oxide thin films chemically vapor deposited at low pressure by W(CO) 6 pyrolysis	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Chemical technology
heal.classification	Τεχνολογία
heal.classification	Χημική τεχνολογία
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://skos.um.es/unescothes/C00565
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Χημική τεχνολογία
heal.keywordURI	http://lod.nal.usda.gov/9664
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh94001275
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85148730
heal.identifier.secondary	ISSN: 00134651
heal.dateAvailable	10000-01-01
heal.language	en
heal.access	forever
heal.publicationDate	1997-02
heal.bibliographicCitation	DAVAZOGLOU, D., MOUTSAKIS, A., VALAMONTES, E.S., PSYCHARIS, V., TSAMAKIS, D.M. (1997). Tungsten oxide thin films chemically vapor deposited at low pressure by W(CO) 6 pyrolysis. Journal of the Electrochemical Society. [online] 144 (2). p. 595-599. Available from: http://www.electrochem.org/	el
heal.abstract	Tungsten oxide thin films were grown by chemical vapor deposition at low pressure (0.1 Torr) and at temperatures ranging between 450 and 600°C, in a cold wall horizontal reactor by pyrolysis of W(CO) 6 vapors. A small air flow through the reactor induces the growth of remarkably well-textured polycrystalline WO 3 films, oriented with the <010> crystallographic axis perpendicular to the substrate as shown by x-ray diffraction and atomic force microscopy measurements. The films were grown on silicon wafers covered by SiO 2, Si 3N 4, and polycrystalline silicon; the film texture was not influenced by the nature of the substrate. In the absence of oxygen during deposition the x-ray diffraction patterns show peaks corresponding to W 2O (beta-tungsten) and to body centered cubic tungsten. These films exhibited metallic or insulating properties depending on the deposition temperature, as determined by resistivity measurements within the range 77 to 350 K. The metallic character was enhanced at lower temperatures. After thermal annealing of these films at 1000°C for 10 s in medium vacuum (2 × 10 -2 Torr) their character changed to purely metallic. The x-ray diffraction patterns taken after annealing show peaks corresponding to body centered cubic W and WO 2.	en
heal.publisher	Electrochemical Society	en
heal.journalName	Journal of the Electrochemical Society	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false