Electron-beam-patterning simulation and metrology of complex layouts on Si/Mo multilayer substrates

dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Δρυγιαννάκης, Δ.	el
dc.contributor.author	Τσικρικάς, Ν.	el
dc.contributor.author	Ράπτης, Ιωάννης	el
dc.contributor.author	Γογγολίδης, Ευάγγελος	el
dc.date.accessioned	2015-05-17T16:54:24Z
dc.date.issued	2015-05-17
dc.identifier.uri	http://hdl.handle.net/11400/10600
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://proceedings.spiedigitallibrary.org	en
dc.subject	Nanotechnology
dc.subject	Εφαρμοσμένη φυσική
dc.subject	Applied physics
dc.subject	Σύνθετες διατάξεις
dc.subject	Ηλεκτρόνια
dc.subject	Δέσμες ηλεκτρονίων
dc.subject	Substrates
dc.subject	Υποστρώματα
dc.title	Electron-beam-patterning simulation and metrology of complex layouts on Si/Mo multilayer substrates	en
heal.type	conferenceItem
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.identifier.secondary	DOI: 10.1117/12.769392
heal.dateAvailable	10000-01-01
heal.language	en
heal.access	forever
heal.publicationDate	2008-03-24
heal.bibliographicCitation	Patsis G., Drygiannakis D., Tsikrikas N., Raptis I. and Gogolides E. (2008) Electron-beam-patterning simulation and metrology of complex layouts on Si/Mo multilayer substrates. In Metrology, Inspection, and Process Control for Microlithography XXII. 24th March 2008. San Jose	en
heal.abstract	Strong candidate lithography for the mass production of devices at the 32nm technology node and beyond is extreme ultra violet lithography (EUVL). The mask used in EUVL is a complex set of layers. The material composition and thickness of each layer should be considered explicitly in an attempt to model the deposited energy in the resist film during fabrication of mask features using electron-beam lithography. Targeting to sub-32nm technology even with the reduction by 4 of the mask features on the wafer level, lithography should consider accurate fabrication features on the mask level of the order of 50nm. Therefore, detailed simulation of the electron-beam fabrication process, as well as the resist dissolution mechanism and etching is demanding. In this work an attempt is initiated targeting in combining two simulation techniques i.e., the electron-beam simulation, with the stochastic lithography simulation, in a common simulation platform. This way it will be possible to get detailed information of the fine details of the fabricated features, taking into account the multilayer substrate of the mask, and the resist material properties. The e-beam simulation algorithm is presented and used to expose a layout. The calculated energy deposition in the resist level, initially determined considering resist material to be continuous, is used in the discrete representation of the resist. With appropriate threshold in the exposure energy, also acid diffusion could be taken into consideration. Stochastic development of the resist material, delivers line-edge roughness (LER) and critical dimension (CD) on the resist level, in terms of polymer chain architecture.	en
heal.publisher	SPIE	en
heal.fullTextAvailability	false
heal.conferenceName	Metrology, Inspection, and Process Control for Microlithography XXII	en
heal.conferenceItemType	poster