Stochastic simulation studies of molecular resists for the 32 nm technology node

dc.contributor.author	Δρυγιαννάκης, Δ.	el
dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Τσικρικάς, Ν.	el
dc.contributor.author	Κόκκορης, Γ.	el
dc.contributor.author	Μπουντούβης, Ανδρέας	el
dc.date.accessioned	2015-05-17T17:30:39Z
dc.date.available	2015-05-17T17:30:39Z
dc.date.issued	2015-05-17
dc.identifier.uri	http://hdl.handle.net/11400/10608
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com	en
dc.source	http://www.sciencedirect.com/science/article/pii/S0167931707008258	en
dc.subject	Applied physics
dc.subject	Molecular resistance
dc.subject	High resolution lithography
dc.subject	LER
dc.subject	Εφαρμοσμένη φυσική
dc.subject	Μοριακή αντίσταση
dc.subject	Λιθογραφία υψηλής ανάλυσης
dc.title	Stochastic simulation studies of molecular resists for the 32 nm technology node	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.contributorName	Ράπτης, Ιωάννης	el
heal.contributorName	Γογγολίδης, Ευάγγελος	el
heal.contributorName	Αργείτης, Π.	el
heal.identifier.secondary	DOI: 10.1016/j.mee.2007.12.072
heal.language	en
heal.access	campus
heal.publicationDate	2008-05
heal.bibliographicCitation	Drygiannakis, D., Patsis, G., Tsikrikas, N., Kokkoris, G., Boudouvis, A. et al. (2008) Stochastic simulation studies of molecular resists for the 32 nm technology node. "Microelectronic Engineering", 85 (5-6), p.949–954	en
heal.abstract	Experiments and simulations suggest that low-molecular-weight resist materials could result in low line-edge roughness (LER) which is a critical parameter for the forthcoming technology nodes. Two positive molecular resist architectures are modeled with a stochastic lithography simulator and their LER behavior is quantified. The corresponding LER values obtained are less than 1nm, suggesting that such materials are promising for the fabrication of devices even down to the 32 nm node. Two-dimensional lattices with the molecular resist architectures are created and combined with the stochastic lithography simulator and a simple etching modeling algorithm, in order to test the transferred line-width roughness (LWR) on the gate region of the pMOS and nMOS transistors of an inverter cell designed with 40 nm nominal gate length. The role of the molecular resist architecture on the final LWR of transistor gate is discussed.	en
heal.publisher	Elsevier	en
heal.journalName	Microelectronic Engineering	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false