Processing effects on the dissolution properties of thin chemically amplified photoresist films

dc.contributor.author	Δρυγιαννάκης, Δ.	el
dc.contributor.author	Ράπτης, Ιωάννης	el
dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Μπουντούβης, Α.	el
dc.contributor.author	vanWerden, K.	en
dc.date.accessioned	2015-05-17T17:40:44Z
dc.date.available	2015-05-17T17:40:44Z
dc.date.issued	2015-05-17
dc.identifier.uri	http://hdl.handle.net/11400/10612
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com	en
dc.source	http://www.sciencedirect.com/science/article/pii/S0167931707008210	en
dc.subject	Νανοτεχνολογία
dc.subject	Εφαρμοσμένη φυσική
dc.subject	Προσομοίωση μέσης κλίμακας
dc.subject	Θερμική επεξεργασία
dc.subject	High resolution lithography
dc.subject	Λιθογραφία υψηλής ανάλυσης
dc.subject	Nanotechnology
dc.subject	Applied physics
dc.subject	Mesoscale simulation
dc.subject	Thermal processing
dc.title	Processing effects on the dissolution properties of thin chemically amplified photoresist films	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.identifier.secondary	DOI: 10.1016/j.mee.2007.12.071
heal.language	en
heal.access	campus
heal.publicationDate	2008-05
heal.bibliographicCitation	Drygiannakis, D., Raptis, I., Patsis, G., Boudouvis, A. and vanWerden, K. (2008) Processing effects on the dissolution properties of thin chemically amplified photoresist films. "Microelectronic Engineering", 85 (5-6), p.955–958	en
heal.abstract	Resist film thickness is anticipated to be 60 nm in the 22 nm technology node setting significant processing challenges due to resist non-bulk behavior. The changes in the dissolution rate of a positive DUV polymer based chemically amplified resist due to various processing conditions such as film thickness, exposure dose, and thermal processing conditions, are experimentally investigated. It is quantified among others, the way an increase of PAB temperature deteriorates dissolution rate at low exposure dose, while in higher exposure doses increasing PAB temperature enhances dissolution rate. Also, an analytic model for the dissolution rate is imported on a stochastic lithography simulator and first quantitative results for thin films are reported.	en
heal.publisher	Elsevier	en
heal.journalName	Microelectronic Engineering	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false