Pattern matching, simulation, and metrology of complex layouts fabricated by electron beam lithography

dc.contributor.author	Τσικρικάς, Ν.	el
dc.contributor.author	Δρυγιαννάκης, Δ.	el
dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Ράπτης, Ιωάννης	el
dc.contributor.author	Gerardino, Annamaria	en
dc.date.accessioned	2015-05-17T17:52:39Z
dc.date.available	2015-05-17T17:52:39Z
dc.date.issued	2015-05-17
dc.identifier.uri	http://hdl.handle.net/11400/10613
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.avs.org/	en
dc.source	http://scitation.aip.org/content/avs/journal/jvstb/25/6/10.1116/1.2798714	en
dc.subject	Νανοτεχνολογία
dc.subject	Δέσμη ηλεκτρονίων
dc.subject	Microprocessor chips
dc.subject	Τσιπ μικροεπεξεργαστή
dc.subject	Εφαρμοσμένη φυσική
dc.subject	Nanotechnology
dc.subject	Applied physics
dc.title	Pattern matching, simulation, and metrology of complex layouts fabricated by electron beam lithography	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.contributorName	Σταυρουλάκης, Σ.	el
heal.contributorName	Βογιατζής, Ε.	el
heal.identifier.secondary	DOI: 10.1116/1.2798714
heal.language	en
heal.access	campus
heal.publicationDate	2007-12-10
heal.bibliographicCitation	Tsikrikas, N., Drygiannakis, D., Patsis, G., Raptis, I., Gerardino, A. et al. (2007) Pattern matching, simulation, and metrology of complex layouts fabricated by electron beam lithography. "Journal of Vacuum Science & Technology B", 25 (6), p.2307-2311	en
heal.abstract	Validation of design rules taking into account fine details such as line-edge roughness, and full chip layout simulation for design inconsistencies, before actual fabrication, are among the main objectives of current software assisted metrology tools. Line-edge roughness quantification should accompany critical dimension (CD) measurements since it could be a large fraction of the total CD budget. A detailed simulation and metrology approach of line-edge roughness quantification versus the length scales in a layout are presented in this work using a combination of electron beam simulation for the exposure part, and stochastic simulations for the modeling of resist film, postexposure bake, and resist dissolution. The method is applied also on a test layout with critical dimension of 200nm and the resulted simulation and scanning electron microscopy images are compared with the aid of a pattern matching algorithm which enables the identification of the desired layout for metrology on a complex layout containing many printed features.	en
heal.publisher	American Vacuum Society	en
heal.journalName	Journal of Vacuum Science & Technology B	en
heal.journalName	JVSTB	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false