Correlation length and the problem of line width roughness

dc.contributor.author	Κωνσταντούδης, Βασίλειος	el
dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Γογγολίδης, Ευάγγελος	el
dc.date.accessioned	2015-05-17T18:02:04Z
dc.date.issued	2015-05-17
dc.identifier.uri	http://hdl.handle.net/11400/10616
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://proceedings.spiedigitallibrary.org	en
dc.source	http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1300173	en
dc.subject	Τρανζίστορ
dc.subject	LWR
dc.subject	Correlation length
dc.subject	Nanotechnology
dc.subject	Μήκος συσχέτισης
dc.subject	Νανοτεχνολογία
dc.title	Correlation length and the problem of line width roughness	en
heal.type	conferenceItem
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.identifier.secondary	DOI: 10.1117/12.712283
heal.dateAvailable	10000-01-01
heal.language	en
heal.access	forever
heal.publicationDate	2007-02-25
heal.bibliographicCitation	Constantoudis, V., Patsis, G. and Gogolides, E. (2007) Correlation length and the problem of line width roughness. In Metrology, Inspection, and Process Control for Microlithography XXI. 25th February 2007. San Jose	en
heal.abstract	The Line Width Roughness (LWR) measured by lithographers usually refers to long resist lines. On the contrary, the transferred roughness in the transistor gate (Gate Length Roughness, GLR) which is one eventually affecting transistor performance is associated with short gate widths equal to only a few multiples of CD values. Given that the most basic roughness metric, r.m.s. value Rq (or sigma), depends on the sample length at which is measured, the issue of the metrological relationship between resist (or lithographic) LWR and transistor GLR arises. The LWR parameter which seems to link these two kinds of roughness is the correlation length, since it determines the form of the curve Rq(L) describing the dependence of r.m.s. value on line length L. This paper investigates three issues relating to correlation length. The first is the precision of its measurement and it is found that the relative standard deviation of the measured values can become less than 25% provided that sufficient line lengths are included in the measurement process. Further, the measurement uncertainty is reduced when lower correlation lengths are measured. Secondly, we examine the importance of the correlation length to the electrical transistor performance and show that lower correlation lengths increase noticeably the fraction of good transistors with reliable small voltage threshold shifts independent on the used technology node and gate width. Finally, the material and process origins of correlation length variations are investigated in order to locate the appropriate changes for reducing correlation length.	en
heal.publisher	SPIE	en
heal.fullTextAvailability	false
heal.conferenceName	Metrology, Inspection, and Process Control for Microlithography XXI	en
heal.conferenceItemType	poster