Aqueous base developable

dc.contributor.author	Χατζηχρηστίδη, Μαργαρίτα	el
dc.contributor.author	Rajta, István	en
dc.contributor.author	Σπηλιώτης, Αθανάσιος	el
dc.contributor.author	Βαλαμόντες, Ευάγγελος Σ.	el
dc.contributor.author	Γουστουρίδης, Δημήτριος	el
dc.date.accessioned	2015-05-17T18:48:19Z
dc.date.available	2015-05-17T18:48:19Z
dc.date.issued	2015-05-17
dc.identifier.uri	http://hdl.handle.net/11400/10619
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://link.springer.com/	en
dc.subject	Acetone
dc.subject	Aspect ratio
dc.subject	Dissolution
dc.subject	Electroplating
dc.subject	Metal recovery
dc.subject	Optimization
dc.subject	Ακετόνη
dc.subject	Αναλογία διαστάσεων
dc.subject	Διάλυση
dc.subject	Ανάκτηση μετάλλων
dc.subject	Βελτιστοποίηση
dc.title	Aqueous base developable	en
heal.type	journalArticle
heal.secondaryTitle	easy stripping, high aspect ratio negative photoresist for optical and proton beam lithography	en
heal.classification	Technology
heal.classification	Engineering
heal.classification	Τεχνολογία
heal.classification	Μηχανική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://zbw.eu/stw/descriptor/19795-3
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Μηχανική
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85000462
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85042445
heal.contributorName	Αργείτης, Παναγιώτης	el
heal.contributorName	Ράπτης, Ιωάννης Α.	el
heal.identifier.secondary	DOI 10.1007/s00542-008-0571-x
heal.language	en
heal.access	campus
heal.publicationDate	2008-10
heal.bibliographicCitation	CHATZICHRISTIDI, M., RAJTA, I., SPELIOTIS, A., VALAMONTES, E.S., GOUSTOURIDIS, D., et al. (2008). Aqueous base developable: easy stripping, high aspect ratio negative photoresist for optical and proton beam lithography. Microsystem Technologies. [online] 14 (9-11). p. 1423-1428. Available from: http://link.springer.com/[Accessed 06/02/2008]	en
heal.abstract	A variety of different photo resists are used for the fabrication of polymer and metal high aspect ratio structures. Among them SU-8, a chemically amplified negative tone photoresist is the mostly used. However, after processing the finished resist pattern (SU-8) is hardly removed from the substrate. In the present work the formulation and process optimization of a negative tone chemically amplified photoresist (TADEP) is presented. TADEP resist owns two advantages: the dissolution of the uncrosslinked areas in IC standard aqueous developers and the easy stripping in acetone by the assistance of ultrasonic bath. The TADEP resist is successfully applied for the fabrication of polymer and metal structures, after electroplating and stripping and also in the case of Proton Beam Writing.	en
heal.publisher	Springer Verlag	en
heal.journalName	Microsystem Technologies	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true