Electron beam lithography simulation for the patterning of EUV masks

dc.contributor.author	Τσικρικάς, Νικόλαος	el
dc.contributor.author	Πάτσης, Γεώργιος Π.	el
dc.contributor.author	Βαλαμόντες, Ευάγγελος Σ.	el
dc.contributor.author	Ράπτης, Ιωάννης Α.	el
dc.contributor.author	Gerardino, Annamaria	en
dc.date.accessioned	2015-05-17T19:19:47Z
dc.date.issued	2015-05-17
dc.identifier.uri	http://hdl.handle.net/11400/10621
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://ieeexplore.ieee.org/	en
dc.subject	Electron backscattering
dc.subject	Electron beam lithography
dc.subject	Molybdenum
dc.subject	Nanopatterning
dc.subject	Silicon
dc.subject	Αναδιάχυση ηλεκτρονίων
dc.subject	Λιθογραφία ηλεκτρονικής δέσμης
dc.subject	Μολυβδαίνιο
dc.subject	Πυρίτιο
dc.title	Electron beam lithography simulation for the patterning of EUV masks	en
heal.type	conferenceItem
heal.classification	Technology
heal.classification	Electrical engineering
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρολογία Μηχανολογία
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://zbw.eu/stw/descriptor/18426-4
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρολογία Μηχανολογία
heal.identifier.secondary	DOI: 10.1109/IMNC.2007.4456108
heal.dateAvailable	10000-01-01
heal.language	en
heal.access	forever
heal.publicationDate	2007
heal.bibliographicCitation	Tsikrikas, N., Patsis, G.P., Valamontes, E.S., Raptis, I.A. & Gerardino, A. (2007) Electron beam lithography simulation for the patterning of EUV masks, In: Proceedings of the 20th International Microprocesses and Nanotechnology Conference, MNC 2007. Kyoto, Japan. 5-8 November, 2007. [online]. p. 68-69, 4456108. Available from: http://ieeexplore.ieee.org/	en
heal.abstract	The effect of the number of layers of the Mo/Si structure and their relative thickness in terms of incident electron energy, on the backscattering coefficient and on the deposited energy in the resist film for a EUV mask is investigated. Experimental single pixel and test layout exposures on various Mo/Si stacks are in progress. Simulation accuracy improvement through the incorporation of secondary electrons and comparison of the simulation results with the corresponding experimental ones is in progress.	en
heal.publisher	IEEE	en
heal.fullTextAvailability	false
heal.conferenceName	20th International Microprocesses and Nanotechnology Conference, MNC 2007	en
heal.conferenceItemType	poster