Εμφάνιση απλής εγγραφής

dc.contributor.author Δρυγιαννάκης, Δ. el
dc.contributor.author Nijkerk, M. D. el
dc.contributor.author Πάτσης, Γεώργιος el
dc.contributor.author Κόκκορης, Γ. el
dc.contributor.author Ράπτης, Ιωάννης el
dc.date.accessioned 2015-05-17T19:34:19Z
dc.date.issued 2015-05-17
dc.identifier.uri http://hdl.handle.net/11400/10622
dc.rights Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.source http://proceedings.spiedigitallibrary.org en
dc.source http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1300391 en
dc.subject Υπεριώδεις ακτίνες
dc.subject Ηλεκτρόνια
dc.subject Λιθογραφία
dc.subject Ultraviolet rays
dc.subject Electrons
dc.subject Lithography
dc.title Simulation of the combined effects of polymer size, acid diffusion length, and EUV secondary electron blur on resist line-edge roughness en
heal.type conferenceItem
heal.classification Technology
heal.classification Electronics
heal.classification Τεχνολογία
heal.classification Ηλεκτρονική
heal.classificationURI http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI **N/A**-Τεχνολογία
heal.classificationURI **N/A**-Ηλεκτρονική
heal.contributorName Leunissen, L. H. A. en
heal.contributorName Γογγολίδης, Ευάγγελος el
heal.identifier.secondary DOI: 10.1117/12.708847
heal.dateAvailable 10000-01-01
heal.language en
heal.access forever
heal.publicationDate 2007-02-25
heal.bibliographicCitation Drygianakis, D., Nijkerk, M.D., Patsis, G., Kokkoris, G., Raptis, I. et al. (2007) Simulation of the combined effects of polymer size, acid diffusion length, and EUV secondary electron blur on resist line-edge roughness. In Advances in Resist Materials and Processing Technology XXIV. 25th February 2007. San Jose en
heal.abstract Device shrinking combined with material manipulation under various process conditions becomes a difficult task if specific optimization conditions should be met. Nanolithography is limited by effects as line-edge and line-width roughness (LER and LWR respectively) and secondary electron blur (SEB). Simulation studies could show the direction of solving design for manufacturing problems. In the current article a simulation methodology is presented, based on the concept of stochastic modeling of exposure, material, and process aspects of lithography and pattern transfer with plasma etching in order to get information about the evolution of critical dimensions (CD), LER and LWR in the layout. The study reveals that under certain process conditions, the effect of acid diffusion on LER is more important than the one of SEB, although both deal with blurring, because acid diffusion is supposed to extend in longer radius. However, when resists of low degree of polymerization are used, SEB should also be considered explicitly since the deteriorations from blurring on both LER and CD are enhanced due to the graining nature of the material. In any case, etching smoothing effects of high frequency LER components should be considered in terms of CD loss. en
heal.publisher SPIE el
heal.fullTextAvailability false
heal.conferenceName Advances in Resist Materials and Processing Technology XXIV en
heal.conferenceItemType poster


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Εμφάνιση απλής εγγραφής

Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες Εκτός από όπου ορίζεται κάτι διαφορετικό, αυτή η άδεια περιγράφεται ως Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες