Stochastic simulation of material and process effects on the patterning of complex layouts

dc.contributor.author	Τσικρικάς, Ν.	el
dc.contributor.author	Δρυγιαννάκης, Δ.	el
dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Κόκκορης, Γεώργιος	el
dc.contributor.author	Ράπτης, Ιωάννης	el
dc.date.accessioned	2015-05-17T20:41:41Z
dc.date.issued	2015-05-17
dc.identifier.uri	http://hdl.handle.net/11400/10628
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://proceedings.spiedigitallibrary.org	en
dc.source	http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1300288	en
dc.subject	Applied physics
dc.subject	Electron beams
dc.subject	Parameter estimation
dc.subject	Lithography
dc.subject	Εφαρμοσμένη φυσική
dc.subject	Δέσμες ηλεκτρονίων
dc.subject	Προσδιορισμός παραμέτρων
dc.subject	Λιθογραφία
dc.title	Stochastic simulation of material and process effects on the patterning of complex layouts	en
heal.type	conferenceItem
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.contributorName	Γογγολίδης, Ευάγγελος	el
heal.identifier.secondary	DOI: 10.1117/12.708858
heal.dateAvailable	10000-01-01
heal.language	en
heal.access	forever
heal.publicationDate	2007-02-25
heal.bibliographicCitation	Tsikrikas, N., Drygiannakis, D., Patsis, G., Kokkoris, G., Raptis, I. et al. (2007) Stochastic simulation of material and process effects on the patterning of complex layouts. In Metrology, Inspection, and Process Control for Microlithography XXI. 25th February 2007. Jan Jose	en
heal.abstract	The whole process of stochastic lithography simulation combined with an electron-beam simulation module, could be useful in the validation of design rules taking into account fine details such as line-edge roughness, and for simulating the layout before actual fabrication for design inconsistencies. Material and process parameters can no more be considered of second order importance in high-density designs. Line-width roughness quantification should accompany CD measurements since it could be a large fraction of the total CD budget. An example of the effects of exposure, material and processes on layouts are presented in this work using a combination of electron beam simulation for the exposure part, stochastic simulations for the modeling of resist film, the post-exposure bake, resist dissolution, and a simple analytic model for resist etching. Particular examples of line-width roughness and critical dimension non-uniformity due to, material, and process effects on the gate of a standard CMOS inverter layout are presented.	en
heal.publisher	SPIE	en
heal.fullTextAvailability	false
heal.conferenceName	Metrology, Inspection, and Process Control for Microlithography XXI	en
heal.conferenceItemType	poster