Stochastic simulation of material and process effects on the patterning of complex layouts

dc.contributor.author	Τσικρικάς, Ν.	el
dc.contributor.author	Δρυγιαννάκης, Δ.	el
dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Ράπτης, Ιωάννης	el
dc.contributor.author	Σταυρουλάκης, Σ.	el
dc.date.accessioned	2015-05-17T21:02:55Z
dc.date.issued	2015-05-18
dc.identifier.uri	http://hdl.handle.net/11400/10630
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://iopscience.iop.org/1347-4065/46/9S/6191?fromSearchPage=true	en
dc.source	http://iopscience.iop.org	en
dc.subject	Electron beams
dc.subject	Parameter estimation
dc.subject	Surface roughness
dc.subject	Εφαρμοσμένη φυσική
dc.subject	Applied physics
dc.subject	Δέσμες ηλεκτρονίων
dc.subject	Προσδιορισμός παραμέτρων
dc.subject	Τραχύτητα εδάφους
dc.title	Stochastic simulation of material and process effects on the patterning of complex layouts	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.contributorName	Βογιατζής, Ε.	el
heal.identifier.secondary	DOI: 10.1143/JJAP.46.6191
heal.dateAvailable	10000-01-01
heal.language	en
heal.access	forever
heal.publicationDate	2007-09-20
heal.bibliographicCitation	Tsikrikas, N., Drygiannakis, D., Patsis, G., Raptis, I., Stavroulakis, S. et al. (2007) Stochastic simulation of material and process effects on the patterning of complex layouts. "Japanese Journal of Applied Physics", 46 (9)	en
heal.abstract	The whole process of stochastic lithography simulation combined with an electron-beam exposure pattern convolution module, could be useful in the validation of design rules taking into account fine details such as line-edge roughness, and for simulating the layout before actual fabrication for design inconsistencies. Material and processing effects would result in even greater feature degradation if not properly controlled. Therefore, material and process parameter can no more be considered of second order importance in proximity effect quantification. Line-width roughness quantification should accompany critical dimension (CD) measurements since it is shown that it could be a large fraction of the total CD in the sub-100 nm length scales. The effects of exposure, material and processes on layouts are presented in this work using a combination of electron beam simulation for the exposure part, and stochastic simulations for the modeling of resist film, and the post-exposure bake and resist dissolution. Particular examples of line-width roughness and critical dimension non-uniformity due to proximity, material, and process effects on complex layouts will be investigated.	en
heal.publisher	The Japan society of Applied Physics	en
heal.journalName	Japanese Journal of Applied Physics	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false