High aspect ratio micro/nano machining with proton beam writing on aqueous developable - easily stripped negative chemically-amplified resists

dc.contributor.author	Χατζηχρηστίδη, Μαργαρίτα	el
dc.contributor.author	Βαλαμόντες, Ευάγγελος Σ.	el
dc.contributor.author	Αργείτης, Παναγιώτης	el
dc.contributor.author	Ράπτης, Ιωάννης Α.	el
dc.contributor.author	Van Kan, Jeroen Anton	en
dc.date.accessioned	2015-05-18T16:35:49Z
dc.date.available	2015-05-18T16:35:49Z
dc.date.issued	2015-05-18
dc.identifier.uri	http://hdl.handle.net/11400/10674
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.elsevier.com	en
dc.subject	High aspect ratio
dc.subject	Micromachining
dc.subject	Nanomachining
dc.subject	Proton beam writing
dc.subject	Resist stripping
dc.subject	Υψηλή αναλογία διαστάσεων
dc.subject	Μικρομηχανική
dc.subject	Νανομηχανική
dc.subject	Γραφή δέσμης πρωτονίου
dc.title	High aspect ratio micro/nano machining with proton beam writing on aqueous developable - easily stripped negative chemically-amplified resists	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Engineering
heal.classification	Τεχνολογία
heal.classification	Μηχανική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://zbw.eu/stw/descriptor/19795-3
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Μηχανική
heal.contributorName	Zhang, Fang	en
heal.contributorName	Watt, Frank R.	en
heal.identifier.secondary	doi:10.1016/j.mee.2007.12.005
heal.language	en
heal.access	campus
heal.publicationDate	2008-05
heal.bibliographicCitation	CHATZICHRISTIDI, M., VALAMONTES, E.S., ARGITIS, P., RAPTIS, I.A., VAN KAN, J.-A., et al. (2008). High aspect ratio micro/nano machining with proton beam writing on aqueous developable - easily stripped negative chemically-amplified resists. Microelectronic Engineering. [online] 85 (5-6). p. 945-948. Available from: http://www.elsevier.com/[Accessed 16/12/2007]	en
heal.abstract	Proton beam writing (PBW) is a new direct-writing process that uses a focused beam of MeV protons to pattern resist material at nano dimensions. PBW has the unique ability to maintain a straight path through 50 μm thick resist films, and is suitable for high aspect ratio micro(nano)-machining. TADEP resist is a new promising high aspect ratio chemically-amplified resist that can be developed in aqueous base developer and has the capability of stripping in conventional stripping schemes. By employing PBW on TADEP resist patterns with 280 nm linewidth and a thickness of 12 μm have been resolved showing an aspect ratio of 42. Following Ni electroplating of the TADEP features, Ni structures of height 0.8 μm and spacing of 167 nm, produced in 2 μm thick TADEP, were demonstrated indicating the easy stripping characteristics of the TADEP resist.	en
heal.publisher	Elsevier	en
heal.journalName	Microelectronic Engineering	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true