Stochastic simulation studies of molecular resists

dc.contributor.author	Δρυγιαννάκης, Δ.	el
dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Ράπτης, Ιωάννης	el
dc.contributor.author	Βιδάλη, Β.	el
dc.contributor.author	Νιακουλά, Δ.	el
dc.date.accessioned	2015-05-18T17:30:27Z
dc.date.available	2015-05-18T17:30:27Z
dc.date.issued	2015-05-18
dc.identifier.uri	http://hdl.handle.net/11400/10682
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com	en
dc.source	http://www.sciencedirect.com/science/article/pii/S0167931707000962	en
dc.subject	Molecular resistance
dc.subject	High resolution lithography
dc.subject	Applied physics
dc.subject	Εφαρμοσμένη φυσική
dc.subject	Μοριακή αντίσταση
dc.subject	Λιθογραφία υψηλής ανάλυσης
dc.title	Stochastic simulation studies of molecular resists	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.contributorName	Κολαδούρος, Ηλίας	el
heal.contributorName	Αργείτης, Π.	el
heal.contributorName	Γογγολίδης, Ευάγγελος	el
heal.identifier.secondary	DOI: 10.1016/j.mee.2007.01.044
heal.language	en
heal.access	campus
heal.publicationDate	2007-01-27
heal.bibliographicCitation	Drygiannakis, D., Patsis, G., Raptis, I., Niakoula, D., Vidali, V. et al. (2007) Stochastic simulation studies of molecular resists. "Microelectronic Engineering", 84 (5-8), p.1062–1065	en
heal.abstract	The influence of resist molecular weight as well as its architecture becomes important in lithographic scales aiming at sub-45 nm resolution. The effects of processing and resist molecular geometry on line-edge roughness (LER) should be well understood in order to meet the ITRS lithographic specifications. In this work, two-dimensional simulations and comparisons of the LER between films of molecular resists and resist films made of oligomers with the same molecular diameter, showed that in all cases molecular resists have lower LER. Explanations of this behavior are proposed based on molecular architecture and the free volume distribution in the resist film. It was also found that the size of free volume regions is less in molecular resist than in the corresponding oligomers.	en
heal.publisher	Elsevier	en
heal.journalName	Microelectronic Engineering	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true