Simulation of material and processing effects on photoresist line-edge roughness

dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Nijkerk, M. D.	el
dc.contributor.author	Leunissen, L. H. A.	el
dc.contributor.author	Γογγολίδης, Ευάγγελος	el
dc.date.accessioned	2015-05-18T17:49:04Z
dc.date.issued	2015-05-18
dc.identifier.uri	http://hdl.handle.net/11400/10685
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.inderscience.com	en
dc.subject	LER
dc.subject	Nanotechnology
dc.subject	Chemically amplified resistsances
dc.subject	Νανοτεχνολογία
dc.subject	Χημικά ενισχυμένες αντιστάσεις
dc.subject	Photoresistance
dc.subject	Φωτοαντίσταση
dc.title	Simulation of material and processing effects on photoresist line-edge roughness	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.identifier.secondary	DOI: 10.1504/IJCSE.2006.012765
heal.dateAvailable	10000-01-01
heal.language	en
heal.access	forever
heal.publicationDate	2006
heal.bibliographicCitation	Patsis, G., Nijkerk, M.D., Leunissen, L.H.A. and Gogolides, E. (2006) Simulation of material and processing effects on photoresist line-edge roughness. "International Journal of Computational Science and Engineering", 2 (3), p.134-143	en
heal.abstract	Sub-100 nm device fabrication rules require extremely tight control of Line-Edge Roughness (LER) of patterned structures. During lithographic processes the resist film introduces an initial LER due to its chemical structure and processing. This initial LER evolves during the subsequent etching step. A stochastic simulator is presented which takes into account material and process effects on photoresist LER. Its application in model cases reveals that LER decreases with lower degree of polymerisation, but is sensitive on the acid diffusion process during post exposure bake in Chemically Amplified Resists (CARs). Further simulations confirm that LER can be reduced during etch patterning, at the expense of critical dimension control.	en
heal.publisher	Interscience Publishers	en
heal.journalName	International Journal of Computational Science and Engineering	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false