Effects of lithography non-uniformity on device electrical behavior

dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Κωνσταντούδης, Βασίλειος	el
dc.contributor.author	Γογγολίδης, Ευάγγελος	el
dc.date.accessioned	2015-05-18T18:30:52Z
dc.date.available	2015-05-18T18:30:52Z
dc.date.issued	2015-05-18
dc.identifier.uri	http://hdl.handle.net/11400/10691
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://link.springer.com	en
dc.source	http://link.springer.com/article/10.1007%2Fs10825-006-0014-9	en
dc.subject	Photoresistance
dc.subject	Material processing
dc.subject	Λιθογραφία
dc.subject	Φωτοαντίσταση
dc.subject	Επεξεργασία υλικού
dc.title	Effects of lithography non-uniformity on device electrical behavior	en
heal.type	journalArticle
heal.secondaryTitle	simple stochastic modeling of material and process effects on device performance	en
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.identifier.secondary	DOI: 10.1007/s10825-006-0014-9
heal.language	en
heal.access	campus
heal.publicationDate	2006-01-18
heal.bibliographicCitation	Patsis, G., Constantoudis, V. and Gogolides, E. (2006) Effects of lithography non-uniformity on device electrical behavior. Simple stochastic modeling of material and process effects on device performance. "Journal of Computational Electronics", 5 (4), p.341-344	en
heal.abstract	Understanding how lithographic material and processing, affect linewidth roughness (LWR), and finally device operation is of immense importance in future scaled MOS transistors. The goal of this work is to determine the impact of LWR on device operation and to connect material and process parameters with it. To this end, we examine the effects of photoresist polymer length and acid diffusion length on LWR and transistor performance. Through the application of a homemade simulator of the lithographic process, it is shown that photoresists with small polymer chains and small acid diffusion lengths form lines with low LWR and thus lead to transistors with more reliable electrical performance.	en
heal.publisher	Springer	en
heal.journalName	Journal of Computational Electronics	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false