Line-width roughness analysis of EUV resists after development in homogenous CO2 solutions using CO2 compatible salts (CCS) by a three-parameter model

dc.contributor.author	Κωνσταντούδης, Βασίλειος	el
dc.contributor.author	Γογγολίδης, Ευάγγελος	el
dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Wagner, M.	en
dc.contributor.author	DeYoung, J.	en
dc.date.accessioned	2015-05-18T18:56:55Z
dc.date.issued	2015-05-18
dc.identifier.uri	http://hdl.handle.net/11400/10695
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://proceedings.spiedigitallibrary.org	en
dc.source	http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1323700	en
dc.subject	Carbon dioxide
dc.subject	Υπεριώδεις ακτίνες
dc.subject	Διοξείδιο του άνθρακα
dc.subject	LWR
dc.subject	Ultraviolet rays
dc.title	Line-width roughness analysis of EUV resists after development in homogenous CO2 solutions using CO2 compatible salts (CCS) by a three-parameter model	en
heal.type	conferenceItem
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.contributorName	Harbinson, C.	en
heal.identifier.secondary	DOI: 10.1117/12.656579
heal.dateAvailable	10000-01-01
heal.language	en
heal.access	forever
heal.publicationDate	2006-04-11
heal.bibliographicCitation	Constantoudis, V., Gogolides, E., Patsis, G., Wagner, M., DeYoung, J. et al. (2006) Line-width roughness analysis of EUV resists after development in homogenous CO2 solutions using CO2 compatible salts (CCS) by a three-parameter model. In Advances in Resist Technology and Processing XXIII. 11 April 2006. San Jose	en
heal.abstract	Line Width Roughness (LWR) of resists constitutes one of the main obstacles in the race of further shrinking the feature dimensions of fabricated devices. Thus, the reduction and control of LWR is one of the biggest challenges of next generation lithographies. In this paper, the LWR output of a new development process of EUV resists which uses homogeneous carbon dioxide (CO2) solutions containing CO2 compatible salts (CCS) has been examined. The measurement and characterization of LWR has been made through the analysis of CD-SEM images and the application of a three-parameter model. The three parameters involved in this model (sigma value σLWR, correlation length ξ, roughness exponent α) determine both the spatial aspects (spectrum) of LWR as well as the interplay between LWR and local CD variations. It is found that wafers developed with CCS process gives substantially lower LWR parameters (σLWR,ξ) than comparable TMAH developed samples. Also, the impact of the preparation of resist wafer (exposure time, PAG and quencher level) and the development conditions (temperature, CCS concentration) on LWR parameters is examined so that we are able to identify trends to lead toward optimized LWR performance.	en
heal.publisher	SPIE	en
heal.fullTextAvailability	false
heal.conferenceName	Advances in Resist Technology and Processing XXIII	en
heal.conferenceItemType	poster