Effects of model polymer chain architectures and molecular weight of conventional and chemically amplified photoresists on line-edge roughness

dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Γογγολίδης, Ευάγγελος	el
dc.date.accessioned	2015-05-18T19:06:45Z
dc.date.available	2015-05-18T19:06:45Z
dc.date.issued	2015-05-18
dc.identifier.uri	http://hdl.handle.net/11400/10697
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com	en
dc.source	http://www.sciencedirect.com/science/article/pii/S0167931706000554	en
dc.subject	LER
dc.subject	Photoresistance
dc.subject	Φωτοαντίσταση
dc.subject	Εφαρμοσμένη φυσική
dc.subject	Applied physics
dc.title	Effects of model polymer chain architectures and molecular weight of conventional and chemically amplified photoresists on line-edge roughness	en
heal.type	journalArticle
heal.secondaryTitle	stochastic simulations	en
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.identifier.secondary	DOI: 10.1016/j.mee.2006.01.039
heal.language	en
heal.access	campus
heal.publicationDate	2006-04
heal.bibliographicCitation	Patsis, G. and Gogolides, E. (2006) Effects of model polymer chain architectures and molecular weight of conventional and chemically amplified photoresists on line-edge roughness. Stochastic simulations. "Microelectronic Engineering", 83 (4-9), p.1078–1081	en
heal.abstract	In the pursuit for low line-edge roughness (LER) photoresists, molecular modeling can aid by pointing the way to the appropriate polymer chain architecture. Stochastic simulations of the whole lithographic process are performed from exposure throughout development of the patterns. The polymer chain architectures studied are the random walk, the randomly grafted chains and the linear chains. Dissolution was performed based on the concept of critical ionization and using a computationally fast dissolution algorithm. The combined effect of chain architecture, deprotection chemistry, and molecular weight on LER was investigated in a two-dimensional simulation framework and directions for reducing photoresist LER are suggested. It is seen that when conventional resists are assumed, linear chains exhibit higher LER than randomly grafted, while in the case of chemically amplified resists the reverse behavior is seen.	en
heal.publisher	Elsevier	en
heal.journalName	Microelectronic Engineering	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false