Etching behavior of Si-containing polymers as resist materials for bilayer lithography

dc.contributor.author	Τσερέπη, Αγγελική Δ.	el
dc.contributor.author	Κορδογιάννης, Γεώργιος	el
dc.contributor.author	Πάτσης, Γεώργιος Π.	el
dc.contributor.author	Κωνσταντούδης, Βασίλειος	el
dc.contributor.author	Γογγολίδης, Ευάγγελος	el
dc.date.accessioned	2015-05-18T19:34:28Z
dc.date.available	2015-05-18T19:34:28Z
dc.date.issued	2015-05-18
dc.identifier.uri	http://hdl.handle.net/11400/10703
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.aip.org/	en
dc.subject	Atomic force microscopy
dc.subject	Chemical modification
dc.subject	Interferometry
dc.subject	Lithography
dc.subject	Photoresists
dc.subject	Plasma etching
dc.subject	Φωτοευαίσθητα υλικά
dc.subject	Χαρακτική στο πλάσμα
dc.subject	Λιθογραφία
dc.subject	Μικροσκοπία Ατομικών Δυνάμεων
dc.subject	Χημική τροποποίηση
dc.subject	Συμβολομετρία
dc.title	Etching behavior of Si-containing polymers as resist materials for bilayer lithography	en
heal.type	journalArticle
heal.secondaryTitle	the case of poly-dimethyl siloxane	en
heal.classification	Science
heal.classification	Physics
heal.classification	Επιστήμες
heal.classification	Φυσική
heal.classificationURI	http://zbw.eu/stw/descriptor/15685-2
heal.classificationURI	http://zbw.eu/stw/descriptor/15669-0
heal.classificationURI	N/A-Επιστήμες
heal.classificationURI	N/A-Φυσική
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh94008704
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85101409
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85103070
heal.contributorName	Βαλαμόντες, Ευάγγελος Σ.	el
heal.contributorName	Eon, David	en
heal.contributorName	Peignon, Marie Claude	fr
heal.contributorName	Cartry, Gilles	en
heal.contributorName	Cardinaud, Christophe	en
heal.contributorName	Turban, Guy	en
heal.identifier.secondary	DOI: 10.1116/1.1535929
heal.language	en
heal.access	campus
heal.publicationDate	2003-01
heal.bibliographicCitation	TSEREPI, A.D., CORDOYIANNIS, G., PATSIS, G.P., CONSTANTOUDIS, V., GOGOLIDES, E., et al. (2003). Etching behavior of Si-containing polymers as resist materials for bilayer lithography: the case of poly-dimethyl siloxane. Journal of Vacuum Science and Technology B. [online] 21 (1). p. 174-182. Available from: http://www.aip.org/[Accessed 18/01/2003]	el
heal.abstract	Line-edge roughness (LER) measurements of plasma-developed siloxane lines were carried out as a function of the radiation exposure dose and plasma development conditions. Results show that careful adjustment of the plasma process parameters is the determining factor in the patterning quality of dry developable bilayer resists with siloxane as the imaging layer.	en
heal.publisher	American Institute of Physics	en
heal.journalName	Journal of Vacuum Science and Technology B	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true