Electron-beam lithography simulation for the fabrication of EUV masks

dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Τσικρικάς, Ν.	el
dc.contributor.author	Ράπτης, Ιωάννης	el
dc.contributor.author	Γλέζος, Ν.	el
dc.date.accessioned	2015-05-18T19:41:54Z
dc.date.available	2015-05-18T19:41:54Z
dc.date.issued	2015-05-18
dc.identifier.uri	http://hdl.handle.net/11400/10705
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com/science/article/pii/S0167931706000608	en
dc.source	http://www.sciencedirect.com	en
dc.subject	Υπεριώδεις ακτίνες
dc.subject	Electron beams
dc.subject	Δέσμες ηλεκτρονίων
dc.subject	Ultraviolet rays
dc.subject	Applied physics
dc.subject	Εφαρμοσμένη φυσική
dc.title	Electron-beam lithography simulation for the fabrication of EUV masks	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.identifier.secondary	DOI: 10.1088/1742-6596/10/1/094
heal.language	en
heal.access	campus
heal.publicationDate	2006-04
heal.bibliographicCitation	Patsis, G., Tsikrikas, N., Raptis, I. and Glezos, N. (2006) Electron-beam lithography simulation for the fabrication of EUV masks. "Microelectronic Engineering", 83 (4-9), p.1148–1151	en
heal.abstract	EUV lithography is considered as a possible technology for the mass production of devices at the 32 nm technology node and beyond. One special characteristic of EUV masks is its composition (Mo/Si multilayer, absorbing layer, etc.) which is totally different for the conventional photomask. This has to be considered explicitly in the simulation of electron-beam energy dissipation calculation (EDF(r)) using Monte Carlo methods. So far the application of analytical methods is very difficult in the case of substrates more complex than resist/layer, 1/layer, 2/bulk layer. The Monte Carlo procedure is utilized for the electron-beam energy deposition in a resist film covering a multi-layer of Mo/Si layers on top of a Si substrate. The effect of the number of layers of the Mo/Si structure and their thickness in terms of incident electron energy, on the backscattering coefficient and on the deposited energy in the multilayer stack is investigated.	en
heal.publisher	Elsevier	en
heal.journalName	Microelectronic Engineering	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false