Roughness characterization in positive and negative resists

dc.contributor.author	Κωνσταντούδης, Βασίλειος	el
dc.contributor.author	Γογγολίδης, Ευάγγελος	el
dc.contributor.author	Τσερέπη, Αγγελική Δ.	el
dc.contributor.author	Διακουμάκος, Κωνσταντίνος Δ.	el
dc.contributor.author	Βαλαμόντες, Ευάγγελος Σ.	el
dc.date.accessioned	2015-05-18T19:50:44Z
dc.date.available	2015-05-18T19:50:44Z
dc.date.issued	2015-05-18
dc.identifier.uri	http://hdl.handle.net/11400/10708
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.elsevier.com	en
dc.subject	Correlation length
dc.subject	fractal dimensions
dc.subject	Metrology
dc.subject	Resists
dc.subject	roughness
dc.subject	Μήκος συσχέτισης
dc.subject	Fractal διάσταση
dc.subject	Μετρολογία
dc.subject	Τραχύτητα
dc.subject	Ανθεκτικό
dc.title	Roughness characterization in positive and negative resists	en
heal.type	journalArticle
heal.generalDescription	Micro and Nano Engineering 2001. Grenoble, France. 16-19 September, 2001. Code 59160	en
heal.classification	Technology
heal.classification	Electrical engineering
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρολογία Μηχανολογία
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://zbw.eu/stw/descriptor/18426-4
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρολογία Μηχανολογία
heal.keywordURI	http://lod.nal.usda.gov/41366
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh2001008470
heal.keywordURI	http://lod.nal.usda.gov/58057
heal.identifier.secondary	doi:10.1016/S0167-9317(02)00424-0
heal.language	en
heal.access	campus
heal.publicationDate	2002-07
heal.bibliographicCitation	CONSTANTOUDIS, V., GOGOLIDES, E., TSEREPI, A.D., DIAKOUMAKOS, C.D. & VALAMONTES, E.S. (2002). Roughness characterization in positive and negative resists. Microelectronic Engineering. [online] 61-62. p. 793-801. Available from: http://www.elsevier.com/[Accessed 05/02/2002]	el
heal.abstract	Different roughness parameters, such as the root mean square deviation (rms or σ), the correlation length Lcor, the fractal dimension D and the Fourier spectrum, are presented and compared. The scaling behavior of σ determining the Lcor as well as the dependence of σ and D on the exposure dose for two negative tone (wet- and plasma-developed) and one positive tone resist are investigated. The experimental analysis reveals an interesting interrelation (inverse behavior) between σ and D which is not predicted by theory, and elucidates the dependence of Lcor on the exposure dose.	en
heal.publisher	Elsevier	en
heal.journalName	Microelectronic Engineering	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true