Surface modification of si-containing polymers during etching for bilayer lithography

dc.contributor.author	Eon, David	en
dc.contributor.author	De Poucques, Ludovic	fr
dc.contributor.author	Peignon, Marie Claude	fr
dc.contributor.author	Cardinaud, Christophe	en
dc.contributor.author	Turban, Guy	en
dc.date.accessioned	2015-05-18T20:01:10Z
dc.date.available	2015-05-18T20:01:10Z
dc.date.issued	2015-05-18
dc.identifier.uri	http://hdl.handle.net/11400/10709
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.elsevier.com	en
dc.subject	Bilayer lithography
dc.subject	Pattern roughness
dc.subject	PDMS
dc.subject	XPS
dc.subject	Διστοιβάδα Λιθογραφίας
dc.subject	Μοτίβο τραχύτητας
dc.title	Surface modification of si-containing polymers during etching for bilayer lithography	en
heal.type	journalArticle
heal.generalDescription	Micro and Nano Engineering 2001. Grenoble, France. 16-19 September, 2001. Code 59160	en
heal.classification	Technology
heal.classification	Electrical engineering
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρολογία Μηχανολογία
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://zbw.eu/stw/descriptor/18426-4
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρολογία Μηχανολογία
heal.contributorName	Τσερέπη, Αγγελική Δ.	el
heal.contributorName	Κορδογιάννης, Γεώργιος	el
heal.contributorName	Βαλαμόντες, Ευάγγελος Σ.	el
heal.contributorName	Ράπτης, Ιωάννης Α.	el
heal.contributorName	Γογγολίδης, Ευάγγελος	el
heal.identifier.secondary	DOI: 10.1016/S0167-9317(02)00482-3
heal.language	en
heal.access	campus
heal.publicationDate	2002-07
heal.bibliographicCitation	EON, D., DE POUCQUES, L., PEIGNON, M.-C., CARDINAUD, C., TURBAN, G., et al. (2002). Surface modification of si-containing polymers during etching for bilayer lithography. Microelectronic Engineering. [online] 61-62. p. 901-906. Available from: http://www.elsevier.com/[Accessed 28/05/2002]	en
heal.abstract	Surface modification of polydimethylsiloxane (PDMS) under O2 plasma exposure is studied by XPS and real time ellipsometry. Results show the conversion of the PDMS surface into a SiOx-like material. Total layer thickness and extension of the SiOx layer are controlled by the sample bias. We suggest that surface and line edge roughness defects occurring when using PDMS as top layer in bilayer lithography are intimately related to the rapid kinetics of conversion and to the formation of SiOx hard micromasks on the surface.	en
heal.publisher	Elsevier	en
heal.journalName	Microelectronic Engineering	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true