Material and process effects on line-edge-roughness of photoresists probed with a fast stochastic lithography simulator

dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Γογγολίδης, Ευάγγελος	el
dc.date.accessioned	2015-05-18T22:01:27Z
dc.date.available	2015-05-18T22:01:27Z
dc.date.issued	2015-05-19
dc.identifier.uri	http://hdl.handle.net/11400/10718
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://scitation.aip.org	en
dc.source	http://scitation.aip.org/content/avs/journal/jvstb/23/4/10.1116/1.1990165	en
dc.subject	Φωτοαντίσταση
dc.subject	LER
dc.subject	Photoresistance
dc.subject	Polymerization
dc.subject	Πολυμερισμός
dc.subject	Διάχυση
dc.subject	Diffusion
dc.title	Material and process effects on line-edge-roughness of photoresists probed with a fast stochastic lithography simulator	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.identifier.secondary	DOI: 10.1116/1.1990165
heal.language	en
heal.access	campus
heal.publicationDate	2005-07-18
heal.bibliographicCitation	Patsis, G. and Gogolides, E. (2005) Material and process effects on line-edge-roughness of photoresists probed with a fast stochastic lithography simulator. "Journal of Vacuum Science & Technology B", 23 (4)	en
heal.abstract	Stochastic simulation of photoresist line-edge roughness (LER) is attempted using a three dimensional (3D) lithography simulator incorporating a fast dissolution algorithm based on a modified critical ionizationmodel. The fast 3D simulation permits detailed evaluation of the material and process effects on LER. In this article the effects of deprotection fraction, critical ionization fraction, photoacid generator concentration, aciddiffusion range, and polymerization length on LER are investigated through simulation. It is found that the relation of LER to photoresistpolymerization length is greatly affected by the photoacid concentration and diffusion range.	en
heal.publisher	American Vacuum Society	en
heal.journalName	Journal of Vacuum Science & Technology B	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false