Effects of photoresist polymer molecular weight and acid-diffusion on line-edge roughness

dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Γογγολίδης, Ευάγγελος	el
dc.contributor.author	vanWerden, K.	el
dc.date.accessioned	2015-05-18T22:23:34Z
dc.date.available	2015-05-18T22:23:34Z
dc.date.issued	2015-05-19
dc.identifier.uri	http://hdl.handle.net/11400/10720
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://iopscience.iop.org	en
dc.source	http://iopscience.iop.org/1347-4065/44/8R/6341?fromSearchPage=true	en
dc.subject	LER
dc.subject	Acid diffusion
dc.subject	Οξύ διάχυσης
dc.subject	Polymerization
dc.subject	Πολυμερισμός
dc.subject	Φωτοαντίσταση
dc.subject	Photoresistance
dc.title	Effects of photoresist polymer molecular weight and acid-diffusion on line-edge roughness	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.identifier.secondary	DOI: 10.1143/JJAP.44.6341
heal.language	en
heal.access	free
heal.publicationDate	2005-08-05
heal.bibliographicCitation	Patsis, G., Gogolides, E. and vanWerden, K. (2005) Effects of photoresist polymer molecular weight and acid-diffusion on line-edge roughness. "Japanese Journal of Applied Physics", 44 (8)	en
heal.abstract	Important factors contributing to line-edge roughness (LER) of chemically amplified resists are, among others, acid diffusion, and photoresist polymer molecular weight (MW). Their effects on the final LER are combined and simulations indicated that acid diffusion can be the major LER modifying factor. Acid-diffusion increases LER overall in a chemically amplified resist in comparison with a conventional one under the same deprotection fraction. In addition, extremely high values of acid-diffusion range can result in smaller LER for higher MW polymers. Under normal acid diffusion conditions, the effect MW on LER is seen to be of secondary importance. Explanations are given based on the critical ionization model for the resist film dissolution, and experimental verification is done with top-down scanning electron microscope (SEM) images for extreme-ultraviolet lithography (EUVL) photoresist.	en
heal.publisher	The Japan society of Applied Physics	en
heal.journalName	Japanese Journal of Applied Physics	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false