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dc.contributor.author Πάτσης, Γεώργιος el
dc.contributor.author Γογγολίδης, Ευάγγελος el
dc.contributor.author vanWerden, K. el
dc.date.accessioned 2015-05-18T22:23:34Z
dc.date.available 2015-05-18T22:23:34Z
dc.date.issued 2015-05-19
dc.identifier.uri http://hdl.handle.net/11400/10720
dc.rights Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.source http://iopscience.iop.org en
dc.source http://iopscience.iop.org/1347-4065/44/8R/6341?fromSearchPage=true en
dc.subject LER
dc.subject Acid diffusion
dc.subject Οξύ διάχυσης
dc.subject Polymerization
dc.subject Πολυμερισμός
dc.subject Φωτοαντίσταση
dc.subject Photoresistance
dc.title Effects of photoresist polymer molecular weight and acid-diffusion on line-edge roughness en
heal.type journalArticle
heal.classification Technology
heal.classification Electronics
heal.classification Τεχνολογία
heal.classification Ηλεκτρονική
heal.classificationURI http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI **N/A**-Τεχνολογία
heal.classificationURI **N/A**-Ηλεκτρονική
heal.identifier.secondary DOI: 10.1143/JJAP.44.6341
heal.language en
heal.access free
heal.publicationDate 2005-08-05
heal.bibliographicCitation Patsis, G., Gogolides, E. and vanWerden, K. (2005) Effects of photoresist polymer molecular weight and acid-diffusion on line-edge roughness. "Japanese Journal of Applied Physics", 44 (8) en
heal.abstract Important factors contributing to line-edge roughness (LER) of chemically amplified resists are, among others, acid diffusion, and photoresist polymer molecular weight (MW). Their effects on the final LER are combined and simulations indicated that acid diffusion can be the major LER modifying factor. Acid-diffusion increases LER overall in a chemically amplified resist in comparison with a conventional one under the same deprotection fraction. In addition, extremely high values of acid-diffusion range can result in smaller LER for higher MW polymers. Under normal acid diffusion conditions, the effect MW on LER is seen to be of secondary importance. Explanations are given based on the critical ionization model for the resist film dissolution, and experimental verification is done with top-down scanning electron microscope (SEM) images for extreme-ultraviolet lithography (EUVL) photoresist. en
heal.publisher The Japan society of Applied Physics en
heal.journalName Japanese Journal of Applied Physics en
heal.journalType peer-reviewed
heal.fullTextAvailability false


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Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες Except where otherwise noted, this item's license is described as Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες