Monte Carlo study of surface and line-width roughness of resist film surfaces during dissolution

dc.contributor.author	Πάτσης, Γεώργιος	el
dc.date.accessioned	2015-05-18T22:31:49Z
dc.date.available	2015-05-18T22:31:49Z
dc.date.issued	2015-05-19
dc.identifier.uri	http://hdl.handle.net/11400/10721
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com	en
dc.source	http://www.sciencedirect.com/science/article/pii/S0378475404002769	en
dc.subject	Polymerization
dc.subject	Πολυμερισμός
dc.subject	Surface roughness
dc.subject	Τραχύτητα εδάφους
dc.subject	Εφαρμοσμένη φυσική
dc.subject	Applied physics
dc.title	Monte Carlo study of surface and line-width roughness of resist film surfaces during dissolution	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.identifier.secondary	DOI: 10.1016/j.matcom.2004.10.006
heal.language	en
heal.access	campus
heal.publicationDate	2005-04-20
heal.bibliographicCitation	Patsis, G. (2005) Monte Carlo study of surface and line-width roughness of resist film surfaces during dissolution. "Mathematics and Computers in Simulation", 68 (2), p.145–156	en
heal.abstract	Molecular simulations are becoming necessary at the length scales of nanolithography, since material models used for the bulk are no longer applicable. At the same time film thickness of materials used throughout the lithographic steps in modern device fabrication reduce down to the order of tens of polymer chain radii of gyration, resulting in great proportions of surface and line-edge roughness over the total film thickness and width, respectively. The dissolution mechanism of these materials is still lacking a final description in the level of full microscopic details. The dissolution of a general positive tone chemically amplified resist film is simulated, using the critical ionization model [P.C. Tsiartas, L.W. Flanagin, C.L. Henderson, W.D. Hinsberg, I.C. Sanchez, R.T. Bonnecaze, C. G. Willson, Macromolecules 30 (1997) 4656]. The polymer film was considered as consisting of polymer chains comprising random walks or self-avoiding random walks on a square two-dimensional lattice. The site-sharing concept is introduced and analyzed in order to produce the desired polymerization length per chain in a highly populated lattice with and without excluded volume effects. The model is used to investigate the variation of surface and line-width roughness in terms of excluded volume effects and polymerization length for high exposure doses.	en
heal.publisher	Elsevier	en
heal.journalName	Mathematics and Computers in Simulation	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false