Surface and line-edge roughness in plasma-developed resists

dc.contributor.author	Τσερέπη, Αγγελική Δ.	el
dc.contributor.author	Βαλαμόντες, Ευάγγελος Σ.	el
dc.contributor.author	Τέγκου, Ευαγγελία	el
dc.contributor.author	Ράπτης, Ιωάννης Α.	el
dc.contributor.author	Γογγολίδης, Ευάγγελος	el
dc.date.accessioned	2015-05-19T07:48:09Z
dc.date.available	2015-05-19T07:48:09Z
dc.date.issued	2015-05-19
dc.identifier.uri	http://hdl.handle.net/11400/10724
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.elsevier.com	en
dc.subject	Bilayer resists
dc.subject	LER
dc.subject	Line-edge roughness
dc.subject	Plasma
dc.subject	SR
dc.subject	Suface roughness
dc.subject	Ανθεκτική διστοιβάδα
dc.subject	Πλάσμα
dc.subject	Τραχύτητα επιφάνειας
dc.title	Surface and line-edge roughness in plasma-developed resists	en
heal.type	journalArticle
heal.generalDescription	Micro-and Nano- Engineering 2000 (MNE 2000); Jena, Germany. 18-21 September, 2000. Code 58456	en
heal.classification	Technology
heal.classification	Electrical engineering
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρολογία Μηχανολογία
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://zbw.eu/stw/descriptor/18426-4
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρολογία Μηχανολογία
heal.identifier.secondary	ISSN: 01679317
heal.language	en
heal.access	campus
heal.publicationDate	2001-09
heal.bibliographicCitation	TSEREPI, A.D., VALAMONTES, E.S., TEGOU, E., RAPTIS, I.A. & GOGOLIDES, E. (2001). Surface and line-edge roughness in plasma-developed resists. Microelectronic Engineering. [online] 57-58. p. 547-554. Available from: http://www.elsevier.com/	en
heal.abstract	Silicon-containing, plasma-developed resists are characterised by surface (SR) and line-edge roughness (LER) measurements as functions of the exposure dose and plasma development conditions. Specifically, bilayer siloxane-based resists of different molecular weight distributions, and single-layer silylated chemically amplified resists are evaluated with measurements of SR and LER, while the results are compared with those of solution-developed chemically amplified resists. We show that plasma-developed systems can have low LER provided the resist material, the resist chemistry, and the processing conditions are chosen appropriately.	en
heal.publisher	Elsevier	en
heal.journalName	Microelectronic Engineering	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true