Electron beam lithography simulation for high resolution and high-density patterns

dc.contributor.author	Ράπτης, Ιωάννης Α.	el
dc.contributor.author	Γλέζος, Νίκος Μ.	el
dc.contributor.author	Βαλαμόντες, Ευάγγελος Σ.	el
dc.contributor.author	Ζέρβας, Ευάγγελος	el
dc.contributor.author	Αργείτης, Παναγιώτης	el
dc.date.accessioned	2015-05-19T07:56:11Z
dc.date.available	2015-05-19T07:56:11Z
dc.date.issued	2015-05-19
dc.identifier.uri	http://hdl.handle.net/11400/10725
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.elsevier.com	en
dc.subject	Boltzmann transport equation
dc.subject	Electron beam lithography
dc.subject	Nanofabrication
dc.subject	Proximity effect
dc.subject	Επίδραση εγγύτητας
dc.subject	Boltzmann εξίσωση μεταφοράς
dc.subject	Λιθογραφία ηλεκτρονικής δέσμης
dc.subject	Νανοκατασκευή
dc.title	Electron beam lithography simulation for high resolution and high-density patterns	en
heal.type	journalArticle
heal.classification	Science
heal.classification	Physics
heal.classification	Επιστήμες
heal.classification	Φυσική
heal.classificationURI	http://zbw.eu/stw/descriptor/15685-2
heal.classificationURI	http://zbw.eu/stw/descriptor/15669-0
heal.classificationURI	N/A-Επιστήμες
heal.classificationURI	N/A-Φυσική
heal.identifier.secondary	DOI: 10.1016/S0042-207X(00)00448-6
heal.language	en
heal.access	campus
heal.publicationDate	2001-06-15
heal.bibliographicCitation	RAPTIS, I.A., GLEZOS, N.M., VALAMONTES, E.S., ZERVAS, E. & ARGITIS, P. (2001). Electron beam lithography simulation for high resolution and high-density patterns. Vacuum. [online] 62 (2-3). p. 263-271. Available from: http://www.elsevier.com/[Accessed 31/05/2001]	en
heal.abstract	A fast simulator for electron beam lithography, called SELID™, is applied for the simulation and prediction of the resist profile of high-resolution patterns in the case of homogeneous and multilayer substrates. For exposure simulation, an analytical solution based on the Boltzmann transport equation (where all important scattering phenomena have been taken into account) for a wide range of e-beam energies is used. The case of substrates consisting of more than one layer (multilayer) is considered in depth as it is of great importance in e-beam patterning. By combining the energy deposition data from simulation with analytical functions describing the resist development (for the conventional positive-resist PMMA), complete simulation of dense layouts in the sub-quarter-micron range has been carried out. Additionally, the simulation results are compared with experimental ones for dense patterns in the sub-quarter-micron region. By using SELID™, forecast of resist profile with considerable accuracy for a wide range of resists, substrates and energies is possible, reducing in that way the cost of process development. Additionally, proximity effect parameters are extracted easily for use in any proximity correction package.	en
heal.publisher	Elsevier	en
heal.journalName	Vacuum	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true