Influence of texture on the absorption threshold of LPCVD silicon films

dc.contributor.author	Δαβάζογλου, Δημήτριος	el
dc.contributor.author	Κουβάτσος, Δημήτριος Ν.	el
dc.contributor.author	Βαλαμόντες, Ευάγγελος Σ.	el
dc.date.accessioned	2015-05-19T08:14:01Z
dc.date.issued	2015-05-19
dc.identifier.uri	http://hdl.handle.net/11400/10726
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://publications.edpsciences.org/	en
dc.subject	Atomic force microscopy
dc.subject	Chemical vapor deposition
dc.subject	Crystallization
dc.subject	Electronic density of states
dc.subject	Film growth
dc.subject	Optical properties
dc.subject	Ανάπτυξη φιλμ
dc.subject	Μικροσκοπία Ατομικών Δυνάμεων
dc.subject	Χημική εναπόθεση ατμών
dc.subject	Κρυστάλλωση
dc.subject	Ηλεκτρονική πυκνότητα καταστάσεων
dc.subject	Οπτικές ιδιότητες
dc.title	Influence of texture on the absorption threshold of LPCVD silicon films	en
heal.type	journalArticle
heal.generalDescription	13th European Conference on Chemical Vapor Deposition (EUROCVD 13). Athens, Greece. 26-31 August 2001. Code 58555	en
heal.classification	Science
heal.classification	Physics
heal.classification	Επιστήμες
heal.classification	Φυσική
heal.classificationURI	http://zbw.eu/stw/descriptor/15685-2
heal.classificationURI	http://zbw.eu/stw/descriptor/15669-0
heal.classificationURI	N/A-Επιστήμες
heal.classificationURI	N/A-Φυσική
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh94008704
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh94001275
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85034495
heal.identifier.secondary	ISSN: 11554339
heal.dateAvailable	10000-01-01
heal.language	en
heal.access	forever
heal.publicationDate	2001
heal.bibliographicCitation	DAVAZOGLOU, D., KOUVATSOS, D.N. & VALAMONTES, E.S. (2001). Influence of texture on the absorption threshold of LPCVD silicon films. Journal De Physique. [online] 11 (3). p. Pr31029-Pr31036. Available from: http://publications.edpsciences.org/	en
heal.abstract	Polycrystalline silicon films were chemically vapor deposited on oxidised silicon and quartz substrates from SiH4 decomposition in a conventional reactor at 230 mTorr and at temperatures of 550, 610 and 700 °C. Samples were characterized by optical transmission and atomic force microscopy measurements. The optical properties of these films were studied within a two-band model proposed by A. Forouhi and I. Bloomer (Phys. Rev. B34, 7018 (1986)) that is able to provide an approximate picture of the energy distribution of the density of electronic states. It was found that this model describes satisfactorily the optical properties of films near the absorption threshold. It was also shown that the energy distribution of the density of states is influenced by crystallization and film texture. Electronic transitions at different points of the Brillouin zone dominate the optical properties. Thus, transitions near the K point of the Brillouin zone dominate the optical properties of films grown at 6 10 °C, while for films grown at 700 °C the dominant role is played by transitions at the X, K and L point.	en
heal.publisher	EDP Sciences	en
heal.journalName	Journal de Physique Archives	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false