Simulation of roughness in chemically amplified resists using percolation theory

dc.contributor.author	Πάτσης, Γεώργιος Π.	el
dc.contributor.author	Γλέζος, Νίκος Μ.	el
dc.contributor.author	Ράπτης, Ιωάννης Α.	el
dc.contributor.author	Βαλαμόντες, Ευάγγελος Σ.	el
dc.date.accessioned	2015-05-19T09:07:24Z
dc.date.available	2015-05-19T09:07:24Z
dc.date.issued	2015-05-19
dc.identifier.uri	http://hdl.handle.net/11400/10728
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.aip.org/	en
dc.subject	Gelation process
dc.subject	Molecular model
dc.subject	Surface roughness
dc.subject	Διαδικασία σχηματισμού γέλης
dc.subject	Μοριακό μοντέλο
dc.subject	Επιφανειακή τραχύτητα
dc.title	Simulation of roughness in chemically amplified resists using percolation theory	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electrical engineering
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρολογία Μηχανολογία
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://zbw.eu/stw/descriptor/18426-4
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρολογία Μηχανολογία
heal.keywordURI	http://id.loc.gov/authorities/subjects/sh85130724
heal.identifier.secondary	ISSN: 10711023
heal.language	en
heal.access	campus
heal.publicationDate	1999
heal.bibliographicCitation	PATSIS, G.P., GLEZOS, N.M., RAPTIS, I.A. & VALAMONTES, E.S. (1999). Simulation of roughness in chemically amplified resists using percolation theory. Journal of Vacuum Science and Technology B. [online] 17 (6). p. 3367-3370. Available from: http://www.aip.org/	en
heal.abstract	A simulator for e-beam exposure and development (SELID) is combined with molecular modeling in order to investigate the various side effects of the gelation process in the case of chemically amplified resists (CARs). The procedure is demonstrated in the case of the negative tone epoxy resist but the method is equally applicable for other resist systems (positive and negative tone) and development mechanisms. A conventional resist simulator is not sufficient for the description of characteristics related to the detailed gel structure of the resist film and it needs to be combined with a molecular model. Molecular modeling is a suitable method for the simulation of the microscopic changes occurring during the post-exposure bake and development processes in the case of CARs. Macroscopic feature changes such as free volume size, cluster formation, and surface roughness can be effectively described using percolation theory. In order to construct a molecular model of a complex resist system a 3D square lattice is considered. The lattice size is equal to the mean radius of the spherical volume occupied by a monomer, in our case about 1 nm. The lattice is filled with the polymer chains by a random walk process and the photoacid generator is randomly distributed in the lattice according to its percent content in the actual material. In the case of an actual resist pattern exposure, SELID provides the energy deposition profile after e-beam exposure. The deposited energy stored into each cell of the lattice induces acid generation and subsequent reactions. Reaction progress is simulated using the molecular model. Using the above process it has been possible to reproduce the actual experimental contrast curves and to simulate line edge roughness.	en
heal.publisher	American Institute of Physics	en
heal.journalName	Journal of Vacuum Science and Technology B	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true