Electron beam lithography on multilayer substrates

dc.contributor.author	Ράπτης, Ιωάννης Α.	el
dc.contributor.author	Meneghini, Giancarlo	it
dc.contributor.author	Rosenbusch, Anja	en
dc.contributor.author	Γλέζος, Νίκος Μ.	el
dc.contributor.author	Palumbo, Rafaelle	it
dc.date.accessioned	2015-05-19T09:24:11Z
dc.date.issued	2015-05-19
dc.identifier.uri	http://hdl.handle.net/11400/10729
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://spie.org/	en
dc.subject	Chemically amplified resists
dc.subject	Electron beam lithography simulation
dc.subject	Multilayer substrates
dc.subject	Proximity effect correction
dc.subject	Πολυστρωματικά υποστρώματα
dc.subject	Εγγύτητα διόρθωσης αποτελέσματος
dc.subject	Ηλεκτρονική προσομοίωση λιθογραφικής δέσμης
dc.title	Electron beam lithography on multilayer substrates	en
heal.type	conferenceItem
heal.secondaryTitle	experimental and theoretical study	en
heal.classification	Technology
heal.classification	Electrical engineering
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρολογία Μηχανολογία
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://zbw.eu/stw/descriptor/18426-4
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρολογία Μηχανολογία
heal.contributorName	Ardito, Marco	it
heal.contributorName	Scopa, Leonardo	it
heal.contributorName	Πάτσης, Γεώργιος Π.	el
heal.contributorName	Βαλαμόντες, Ευάγγελος Σ.	el
heal.contributorName	Αργείτης, Παναγιώτης	el
heal.identifier.secondary	DOI: 10.1117/12.309597
heal.dateAvailable	10000-01-01
heal.language	en
heal.access	forever
heal.publicationDate	1998
heal.bibliographicCitation	Raptis, I.A., Meneghini, G., Rosenbusch, A., Glezos, N.M., Palumbo, R., et al. (1998) Electron beam lithography on multilayer substrates: experimental and theoretical study, In: Proceedings of SPIE, Emerging Lithographic Technologies II. Santa Clara, CA, United States. 23-25 February, 1998. [online] 3331. p. 431-441. Available from: http://proceedings.spiedigitallibrary.org/	en
heal.abstract	A fast simulator for electron beam lithography called SELID, is presented. For the exposure part, an analytical solution based on the Boltzmann transport equation is used instead of Monte Carlo. This method has been proved much faster than Monte Carlo. All important phenomena are included in the calculation. Additionally, the reaction/diffusion effects occurring during post exposure bake in the case of chemically amplified resists are taken into account. The result obtained by the simulation are compared successfully with experimental and other simulation results for conventional and chemically amplified resists. The case of substrates consisting of more than one layer is considered in depth as being of great importance in electron beam patterning. By using SELID, it is possible to forecast the resist profile with considerable accuracy for a wide range of resists, substrates and energies. Additionally, proximity effect parameters are extracted easily for use in any proximity correction package.	en
heal.publisher	SPIE	en
heal.fullTextAvailability	false
heal.conferenceName	Emerging Lithographic Technologies II	en
heal.conferenceItemType	poster