dc.contributor.author | Καλτσάς, Γρηγόριος | el |
dc.contributor.author | Γλέζος, Νίκος Μ. | el |
dc.contributor.author | Βαλαμόντες, Ευάγγελος Σ. | el |
dc.contributor.author | Νασιοπούλου, Ανδρούλα Γ. | el |
dc.date.accessioned | 2015-05-19T09:38:06Z | |
dc.date.available | 2015-05-19T09:38:06Z | |
dc.date.issued | 2015-05-19 | |
dc.identifier.uri | http://hdl.handle.net/11400/10730 | |
dc.rights | Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.source | http://eu.wiley.com/WileyCDA/ | en |
dc.subject | Boltzmann transport equation | |
dc.subject | Electron probe microanalysis | |
dc.subject | Electron beam lithography | |
dc.subject | Mathematical models | |
dc.subject | Λιθογραφία ηλεκτρονικής δέσμης | |
dc.subject | Μαθηματικά μοντέλα | |
dc.subject | Boltzmann εξίσωση μεταφοράς | |
dc.subject | Ηλεκτρονικός ανιχνευστής μικροανάλυσης | |
dc.title | Thickness determination of thin films based on X-ray signal decay law | en |
heal.type | journalArticle | |
heal.classification | Technology | |
heal.classification | Electrical engineering | |
heal.classification | Τεχνολογία | |
heal.classification | Ηλεκτρολογία Μηχανολογία | |
heal.classificationURI | http://id.loc.gov/authorities/subjects/sh85133147 | |
heal.classificationURI | http://zbw.eu/stw/descriptor/18426-4 | |
heal.classificationURI | **N/A**-Τεχνολογία | |
heal.classificationURI | **N/A**-Ηλεκτρολογία Μηχανολογία | |
heal.keywordURI | http://id.loc.gov/authorities/subjects/sh85042233 | |
heal.language | en | |
heal.access | campus | |
heal.publicationDate | 1998-11 | |
heal.bibliographicCitation | KALTSAS, G., GLEZOS, N.M., VALAMONTES, E.S. & NASSIOPOULOU, A.G. (1998). Thickness determination of thin films based on X-ray signal decay law. Surface and Interface Analysis. [online] 26 (12). p. 876-884. Available from: http://eu.wiley.com/WileyCDA/ | en |
heal.abstract | A non-destructive method for evaluation of the thickness of films over bulk substrates is presented. This method is based on evaluation of the parameters of the decay part of the x-ray signal ratio. For a selected energy range of each film thickness it is demonstrated that the decay part follows an exponential law. The physical parameters involved in this law are the energy exponent and a constant that depends mainly upon the film thickness. The values found for the energy exponent are in the range 2.0-3.0. This is confirmed in a variety of cases (Al/Si, Ti/Si, Cu/Si, Pt/Si, Cu/Ni, Ti/Au and Pt/Au) for film thicknesses larger than a critical value. The experimental results are compared to those obtained by two theoretical methods and a Monte-Carlo approach. The first method is based on solution of the Boltzmann transport equation for the electron beam, an approach developed by one of the authors for e-beam lithography. The second is based on a previously developed semi-empirical formula for the x-ray depth distribution function. The energy dependence of the signal ratio is also discussed using this approach. | en |
heal.publisher | Wiley | en |
heal.journalName | Surface and Interface Analysis | en |
heal.journalType | peer-reviewed | |
heal.fullTextAvailability | true |
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