Stochastic simulation of thin photoresist film dissolution

dc.contributor.author	Πάτσης, Γεώργιος	el
dc.date.accessioned	2015-05-19T14:27:36Z
dc.date.available	2015-05-19T14:27:36Z
dc.date.issued	2015-05-19
dc.identifier.uri	http://hdl.handle.net/11400/10735
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://www.sciencedirect.com	en
dc.source	http://www.sciencedirect.com/science/article/pii/S0032386105000637	en
dc.subject	Μικροηλεκτρονική
dc.subject	Νανοτεχνολογία
dc.subject	Πολυμερές
dc.subject	Polymer
dc.subject	Microelectronics
dc.subject	Nanotechnology
dc.title	Stochastic simulation of thin photoresist film dissolution	en
heal.type	journalArticle
heal.secondaryTitle	a dynamic and a quasi-static dissolution algorithm for the simulation of surface and line-edge roughness formation	en
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.identifier.secondary	DOI: 10.1016/j.polymer.2005.01.049
heal.language	en
heal.access	campus
heal.publicationDate	2005-03-10
heal.bibliographicCitation	Patsis, G. (2005) Stochastic simulation of thin photoresist film dissolution: a dynamic and a quasi-static dissolution algorithm for the simulation of surface and line-edge roughness formation. "Polymer", 46 (7), p.2404–2417	en
heal.abstract	Stochastic simulation techniques gain increased importance in the field of microelectronic processes especially since the sub-100 nm device dimensions have been reached. In this work, stochastic Monte Carlo techniques are incorporated to simulate photoresist polymer chains in a lattice, while all the phenomena taking place during film dissolution are considered in terms of occurrence probabilities in order to describe the dynamics of dissolution. Chain removal is based on the critical ionization fraction criterion. The exponential decrease of dissolution rate with increasing polymerization length is proven and its relation to critical ionization is investigated both in two and three dimensions (2D/3D), resulting in an efficient method for the determination of the dissolution rate in terms of polymerization length and critical ionization fraction. While the dynamic dissolution algorithm is appropriate for obtaining information about dissolution rate and surface roughness evolution, the increased computational time in high values of critical ionization fraction and lattice sizes, especially in 3D, make it inappropriate for line-edge roughness studies. A quasi-static 2D/3D resist dissolution algorithm, which is free of the dissolution blocking problems and orders of magnitude faster than the dynamic one, based again on the critical ionization criterion, is constructed in order to reliably quantify line-edge roughness.	en
heal.publisher	Elsevier	en
heal.journalName	Polymer	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	false