Electron-beam lithography simulation for EUV mask applications

dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Γλέζος, Νίκος	el
dc.date.accessioned	2015-05-19T15:24:37Z
dc.date.available	2015-05-19T15:24:37Z
dc.date.issued	2015-05-19
dc.identifier.uri	http://hdl.handle.net/11400/10738
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://iopscience.iop.org	en
dc.source	http://iopscience.iop.org/1742-6596/10/1/094/	en
dc.subject	Υπεριώδεις ακτίνες
dc.subject	Δέσμες ηλεκτρονίων
dc.subject	Semiconductors
dc.subject	Ulatraviolet rays
dc.subject	Electron beams
dc.subject	Ημιαγωγοί
dc.title	Electron-beam lithography simulation for EUV mask applications	en
heal.type	journalArticle
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.identifier.secondary	DOI: 10.1088/1742-6596/10/1/094
heal.language	en
heal.access	campus
heal.publicationDate	2005
heal.bibliographicCitation	Patsis, G. and Glezos, N. (2005) Electron-beam lithography simulation for EUV mask applications. "Journal of Physics: Conference Series", 10 (1), p.385-388	en
heal.abstract	Extreme-ultraviolet-(EUV) mask fabrication using electron-beam lithography has to eliminate the proximity effect defects, for the accurate representation of the patterned features. One special characteristic of EUV masks is that they contain a multilayer stack of repeated Si/Mo thin layers. This has to be considered explicitly in the simulation of electron-beam energy dissipation calculation using Monte Carlo methods. In a first approximation to the problem of electron scattering in a multi-layer substrate, the continuous slowing down approximation utilizing the Rutherford differential cross section is used in order to describe the electron inelastic energy loss mechanism and determine the amount of deposited backscattered energy, in the resist film on top of the multi-layer substrate. Three-dimensional modeling is used and in this first attempt to describe the process, no secondary electron generation or other excitation processes are considered. The effect of the number of layers and their relative thickness in terms of incident electron energy is investigated.	en
heal.journalName	Journal of Physics: Conference Series	en
heal.journalType	peer-reviewed
heal.fullTextAvailability	true