Effects of different processing conditions on line-edge roughness for 193-nm and 157-nm resists

dc.contributor.author	Ercken, Monique	en
dc.contributor.author	Leunissen, Leonardus H. A.	en
dc.contributor.author	Pollentier, Ivan	en
dc.contributor.author	Πάτσης, Γεώργιος	el
dc.contributor.author	Κωνσταντούδης, Βασίλειος	el
dc.date.accessioned	2015-05-19T16:55:53Z
dc.date.issued	2015-05-19
dc.identifier.uri	http://hdl.handle.net/11400/10748
dc.rights	Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.source	http://proceedings.spiedigitallibrary.org	en
dc.source	http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1322919	en
dc.subject	Spatial frequencies
dc.subject	Χωρικές συχνότητες
dc.subject	LER
dc.subject	Nanotechnology
dc.subject	Νανοτεχνολογία
dc.title	Effects of different processing conditions on line-edge roughness for 193-nm and 157-nm resists	en
heal.type	conferenceItem
heal.classification	Technology
heal.classification	Electronics
heal.classification	Τεχνολογία
heal.classification	Ηλεκτρονική
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85133147
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh85042383
heal.classificationURI	N/A-Τεχνολογία
heal.classificationURI	N/A-Ηλεκτρονική
heal.contributorName	Γογγολίδης, Ευάγγελος	el
heal.identifier.secondary	DOI: 10.1117/12.537339
heal.dateAvailable	10000-01-01
heal.language	en
heal.access	forever
heal.publicationDate	2004-02-22
heal.bibliographicCitation	Ercken, M., Leunissen, L.H.A., Pollentier, I., Patsis, G., Constantoudis, V. et al. (2004) Effects of different processing conditions on line-edge roughness for 193-nm and 157-nm resists. In Metrology, Inspection, and Process Control for Microlithography XVIII. 22nd February 2003. Santa Clara	en
heal.tableOfContents	The control and minimization of resist line edge (or width) roughness (LER or LWR) is increasing in importance. It requires first a complete and reliable characterization scheme of LER, including frequency dependency, and then an investigation and understanding of its origins and methods for improvement. A new characterization method, introduced by Demokritos and based on the offline analysis of top-down SEM pictures, has been evaluated and compared to more conventional inline measurements. This enables us to include additional parameters that quantify the spatial aspects of LER, next to the classical LER 3σ value. The spatial frequency dependence can also be determined from the inline measurements. Both techniques are applied to several test cases: the impact on LER of changing softbake (SB) and post-exposure bake (PEB) temperature, and changing aerial image contrast (AIC). Also, the improvements in an etch optimization experiment are quantified. The majority of the work is concentrating on 193nm resists, but initial experiments with a 157nm resist will be shown. This work has led to a better understanding of some of the contributors to line edge roughness and gives the possibility to quantify process improvements in a better way.	en
heal.publisher	SPIE	en
heal.fullTextAvailability	false
heal.conferenceName	Metrology, Inspection, and Process Control for Microlithography XVIII	en
heal.conferenceItemType	poster